3MW peak power Nd~(+3):YAG/Cr~(+4):YAG microchip laser with efficient frequency conversion

机译：高效变频的3MW峰值功率Nd〜（+3）：YAG / Cr〜（+4）：YAG微芯片激光器

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1 mJ pulse energy with a pulse duration less 300 ps was achieved in Nd~(+3):YAG/Cr~(+4):YAG microchip laser. To overcome the polarization instability an output coupler sensitive to polarization was designed, using a multilayer dielectric mirror evaporated on a substrate made of a birefringent calcite crystal. Reflection coefficients for ordinary and extraordinary beams R_o = 53% and R_e = 57% were obtained. Subnanosecond laser operating at 1064 nm, 532 nm and 355 nm wavelengths with high output brightness and intensity was constructed.

机译：在Nd〜（+3）：YAG / Cr〜（+4）：YAG微芯片激光器中获得了1 mJ的脉冲能量，脉冲持续时间小于300 ps。为了克服偏振不稳定性，使用在双折射方解石晶体制成的基板上蒸发的多层介电镜设计了对偏振敏感的输出耦合器。获得了普通光束和异常光束的反射系数R_o = 53％和R_e = 57％。构造了在1064 nm，532 nm和355 nm波长下工作的具有高输出亮度和强度的亚纳秒激光器。

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来源
《Advanced Lassers and Systems; Proceedings of SPIE-The International Society for Optical Engineering; vol.6731》|2007年|P.50.1-50.5|共5页
会议地点 Minsk(BY)
作者
D.A. Kuznetsov; E.A. Levtchuk; A.G. Okhrimchuk; A.V. Shestakov;
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作者单位

Elements of Laser Systems Co., 3 Vvedensky Str., Moscow 117342, Russia;

Fiber Optics Research Center, RAS, 38 Vavilov Str., Moscow 119333, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
关键词
microchip; dielectric mirror; wavelength conversion;

机译：微芯片介质镜波长转换;
入库时间 2022-08-26 13:44:23

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专利

1. > 3 MW peak power at 266 nm using Nd:YAG/ Cr4+:YAG microchip laser and fluxless-BBO [J] . R. Bhandari, T. Taira, A. Miyamoto, Optical Materials Express . 2012,第7期

机译：使用Nd：YAG / Cr 4 + ：YAG微芯片激光器和无通量BBO在266 nm处的峰值功率> 3 MW
2. > 3 MW peak power at 266 nm using Nd:YAG/ Cr4+:YAG microchip laser and fluxless-BBO [J] . R. Bhandari, T. Taira, A. Miyamoto, Optical Materials Express . 2012,第7期

机译：使用Nd：YAG / Cr 4 + ：YAG微芯片激光器和无通量BBO在266 nm处的峰值功率> 3 MW
3. Experimental Study on Pumping Characteristics of High Repetition Frequency High Peak Power End-pumped Nd:YAG Bonded Microchip Laser [J] . Lei Huang, Mali Gong, Ping Yan, Journal of Optical Communications . 2007,第3期

机译：高重复频率高峰值功率Nd：YAG键合芯片激光器抽运特性的实验研究
4. 3MW peak power Nd~(+3):YAG/Cr~(+4):YAG microchip laser with efficient frequency conversion [C] . D.A. Kuznetsov, E.A. Levtchuk, A.G. Okhrimchuk, International Conference on Lasers, Applications, and Technologies . 2007

机译：3MW峰值功率Nd〜（+3）：YAG / CR〜（+4）：YAG Microchip激光，具有高效的变频转换
5. Self-heterodyne beating of dual polarization modes in a single-frequency, microchip holmium,thulium:YAG laser and injection -seeding of a Q-switched oscillator. [D] . He, Chuan. 1994

机译：单频微芯片chip，YAG激光器中双极化模式的自外差拍打和调Q振荡器的注入-播种。
6. Highly flexible fiber delivery of a high peak power nanosecond Nd:YAG laser beam for flexiscopic applications [O] . Hamed Abbasi, Ferda Canbaz, Raphael Guzman, 2021

机译：高峰值功率纳秒Nd：YAG激光束的高度灵活纤维输送用于柔性应用
7. > 1 MW peak power, an efficient Yb:YAG/Cr4+:YAG composite crystal passively Q-switched laser [O] . Dong Jun, Ren Yingying, Cheng Huihui, 2014

机译：> 1 MW峰值功率，高效的Yb：YAG / Cr4 +：YAG复合晶体被动调Q激光器
8. Frequency-Modulated Nd:YAG Microchip Lasers [R] . Zayhowski, J. J., Mooradian, A. 1989

机译：调频Nd：YaG microchip激光器

3MW peak power Nd~(+3):YAG/Cr~(+4):YAG microchip laser with efficient frequency conversion

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