Effect of Thermal Annealing on Electrical Properties of Si-LiNbO_3

机译：热退火对Si-LiNbO_3电性能的影响

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The substructure and electrical properties of the films with the thickness up to 2.0 μm deposited on Si by the methods of the radio frequency magnetron and ion-beam sputtering of a LiNbO_3 target have been investigated. It has been established that in thermally annealed samples an activated conduction mechanism with variable jump distance takes place. As a result of thermal annealing a decrease in the charge localization centers (CLC) in the LiNbO_3 films from N_t=3 • 10~(18)cm~(-3) to N_t=3 • 10~(16)cm~(-3) occurs.

机译：研究了通过射频磁控管和离子束溅射法对LiNbO_3靶沉积在Si上的厚度最大为2.0μm的薄膜的亚结构和电性能。已经确定，在热退火的样品中，发生了具有可变跳跃距离的激活的传导机制。热退火的结果是，LiNbO_3薄膜中的电荷定位中心（CLC）从N_t = 3•10〜（18）cm〜（-3）降低到N_t = 3•10〜（16）cm〜（- 3）发生。

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来源
《Advanced materials and nanotechnology》|2011年|p.53-57|共5页
会议地点 Wellington(NZ);Wellington(NZ)
作者
Ievlev V.M.; Sumets M.P.; Kostyuchenko A.V.;
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作者单位

Voronezh State University, Universitetskaya pl.,1, 394006, Voronezh, Russia;

Voronezh State University of Architecture and Civil Engineering, 20-Letiya Oktyabrya st., 84, 394006,Voronezh, Russia;

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原文格式 PDF
正文语种 eng
中图分类工程材料一般性问题;
关键词
thin films of LiNbO_3; structural analysis; ferroelectrics; electrical properties;

机译：LiNbO_3薄膜；结构分析;铁电体电性能;

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Effect of Thermal Annealing on Electrical Properties of Si-LiNbO_3

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