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Simulations of avalanche breakdown statistics: probability and timing

机译:雪崩击穿统计的模拟:概率和时机

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Important avalanche breakdown statistics for Single Photon Avalanche Diodes (SPADs), such as avalanche breakdown probability, dark count rate, and the distribution of time taken to reach breakdown (providing mean time to breakdown and jitter), were simulated. These simulations enable unambiguous studies on effects of avalanche region width, ionization coefficient ratio and carrier dead space on the avalanche statistics, which are the fundamental limits of the SPADs. The effects of quenching resistor/circuit have been ignored. Due to competing effects between dead spaces, which are significant in modern SPADs with narrow avalanche regions, and converging ionization coefficients, the breakdown probability versus overbias characteristics from different avalanche region widths are fairly close to each other. Concerning avalanche breakdown timing at given value of breakdown probability, using avalanche material with similar ionization coefficients yields fast avalanche breakdowns with small timing jitter (albeit higher operating field), compared to material with dissimilar ionization coefficients. This is the opposite requirement for abrupt breakdown probability versus overbias characteristics. In addition, by taking band-to-band tunneling current (dark carriers) into account, minimum avalanche region width for practical SPADs was found to be 0.3 and 0.2 μm, for InP and InAlAs, respectively.
机译:模拟了单光子雪崩二极管(SPAD)的重要雪崩击穿统计数据,例如雪崩击穿概率,暗计数率以及达到击穿所需的时间分布(提供平均击穿和抖动时间)。这些模拟可以明确研究雪崩区宽度,电离系数比和载流子死区对雪崩统计的影响,而雪崩统计是SPAD的基本限制。淬灭电阻器/电路的影响已被忽略。由于死空间之间的竞争效应,这在具有狭窄雪崩区域的现代SPAD中非常重要,并且电离系数会聚,因此不同雪崩区域宽度的击穿概率与过偏置特性彼此相当接近。关于在给定的击穿概率值下雪崩击穿时间,与电离系数不同的材料相比,使用具有相似电离系数的雪崩材料会产生快速的雪崩击穿,且定时抖动较小(尽管工作场更大)。这是突然击穿概率与偏向特性相反的要求。此外,考虑到带间隧穿电流(暗载流子),对于InP和InAlAs,实际SPAD的最小雪崩区域宽度分别为0.3和0.2μm。

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