• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>SPIE Defense, Security, and Sensing Symposium >Simulations of avalanche breakdown statistics: probability and timing
【24h】

Simulations of avalanche breakdown statistics: probability and timing

机译：雪崩崩溃统计数据的模拟：概率和时间

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Important avalanche breakdown statistics for Single Photon Avalanche Diodes (SPADs), such as avalanche breakdown probability, dark count rate, and the distribution of time taken to reach breakdown (providing mean time to breakdown and jitter), were simulated. These simulations enable unambiguous studies on effects of avalanche region width,ionization coefficient ratio and carrier dead space on the avalanche statistics, which are the fundamental limits of the SPADs. The effects of quenching resistor/circuit have been ignored. Due to competing effects between dead spaces, which are significant in modern SPADs with narrow avalanche regions, and converging ionization coefficients, the breakdown probability versus overbias characteristics from different avalanche region widths are fairly close to each other. Concerning avalanche breakdown timing at given value of breakdown probability, using avalanche material with similar ionization coefficients yields fast avalanche breakdowns with small timing jitter (albeit higher operating field), compared to material with dissimilar ionization coefficients. This is the opposite requirement for abrupt breakdown probability versus overbias characteristics. In addition, by taking band-to-band tunneling current (dark carriers) into account, minimum avalanche region width for practical SPADs was found to be 0.3 and 0.2 μm, for InP and InAlAs, respectively.
机译：重要的雪崩崩溃统计，单一光子雪崩二极管（SPAD），如雪崩击穿概率，暗计数率和达到击穿（提供平均击穿和抖动）的时间分布（提供崩溃和抖动）。这些模拟能够实现雪崩区宽度，电离系数比和载波死区对雪崩统计的影响的明确研究，这是侧面的基本界限。淬火电阻/电路的影响已被忽略。由于死路之间的竞争效果，这在具有狭窄雪崩区的现代侧面和融合电离系数中具有较大的效果，因此来自不同雪崩区宽度的击穿概率与覆盖特性相互彼此相当靠近。关于给定的崩溃概率值的雪崩击穿定时，使用具有类似电离系数的雪崩材料，与具有不同离子化系数的材料相比，使用小时序抖动（尽管较高的操作场）产生快速雪崩击穿。这是对突然击穿概率与过度特性的相反要求。另外，通过考虑带对带隧道电流（黑暗载体），发现实际侧面的最小雪崩区别为0.3和0.2μm，分别用于INP和Inalas。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号