• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication >GaInP/GaAs multiwafer production in a commercial-available AIX 2000 reactor
【24h】

GaInP/GaAs multiwafer production in a commercial-available AIX 2000 reactor

机译：在商用AIX 2000反应器中生产GaInP / GaAs多晶片

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Abstract: This paper summarizes the breakthrough in III - V multiwafer MOVPE mass production applications using the Planetary Multiwafer Reactor with Gas Foil Rotation (5 $MUL 3 inch/7 $MUL 2 inch or 5 $MUL 4 inch/8 $MUL 3 inch) which was originally developed and patented by LEP for growth of GaAs/AlGaAs heterostructures and has been used successfully since then for HEMT production, laser fabrication, and GaInP deposition. In similar planetary reactors, GaAs and InP based materials for a wide range of optoelectronic applications have been produced. The use of low pressures is not only advantageous for the handling of P-containing compounds and reduction of overall gas consumption, but also allows drastic reduction of the amount of H$-2$/ required for driving the wafer support. The variation of thickness in these multiwafer systems is reduced to the order of 1 - 2% for GaAs, AlGaAs, GaInP, InP, GaInAs, and GaInAsP (1.55, 1.3, 1.05 $mu@m). Thus, one major advantage in comparison to MBE is that these reactors are capable of handling both GaAs and InP based processes with high concentration of phosphorus. For production of visible lasers (AlGaInP), GaInP HBTs, or complex solar cell structures, these processes have also been developed. This finally makes this MOVPE technology by far superior for production application than MBE. !13
机译：摘要：本文总结了使用带气膜旋转的行星式多晶片反应器在III-V多晶片MOVPE量产应用中的突破（5 $ MUL 3英寸/ 7 $ MUL 2英寸或5 $ MUL 4英寸/ 8 $ MUL 3英寸）它最初是由LEP开发并获得专利的，用于生长GaAs / AlGaAs异质结构，此后已成功用于HEMT生产，激光制造和GaInP沉积。在类似的行星反应堆中，已经生产出用于多种光电应用的基于GaAs和InP的材料。低压的使用不仅有利于处理含P的化合物和减少总体气体消耗，而且还可以大大减少驱动晶片支撑件所需的H $ -2 $ /。对于GaAs，AlGaAs，GaInP，InP，GaInAs和GaInAsP，在这些多晶片系统中的厚度变化减小到1-2％的量级（1.55、1.3、1.05μm·m）。因此，与MBE相比，一个主要优点是这些反应器能够处理高浓度磷的GaAs和InP基工艺。为了生产可见光激光器（AlGaInP），GaInP HBT或复杂的太阳能电池结构，还开发了这些工艺。最终，这种MOVPE技术在生产应用方面比MBE优越得多。 ！13

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号