Quantization of static domains in slim superlattices

机译：超薄超晶格中静态域的量化

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Abstract: We have calculated dc I - V curves of the semiconductor superlattices of a very small (practically, submicron) cross- section. The I - V curves exhibit periodic oscillations with a voltage period e/C. These oscillations are caused by quantization of electric charge Q of the walls of static high-field domains. !19

机译：摘要：我们已经计算出横截面非常小（实际上是亚微米）的半导体超晶格的dc I-V曲线。 I-V曲线表现出具有电压周期e / C的周期性振荡。这些振荡是由静态高场域壁的电荷Q的量化引起的。！19

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来源
《Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication》|1992年|p.191-199|共9页
会议地点 Somerset NJ(US)
作者
Dmitri V. Averin; SUNY/Stony Brook; Moscow State Univ.; Stony Brook; NY; USA; A.N. Korotkov; Moscow State Univ.; Moscow; Russia; Konstantin K. Likharev; SUNY/Stony Brook; Moscow State Univ.; Stony Brook; NY; USA.;
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中图分类无线电电子学、电信技术;
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Quantization of static domains in slim superlattices

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