• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication >Direct electron-beam patterning on a nanometer scale of CaF2 layers grown by MBE on silicon <111>
【24h】

Direct electron-beam patterning on a nanometer scale of CaF2 layers grown by MBE on silicon <111>

机译：MBE在硅上通过纳米束生长的CaF2层的纳米级直接电子束构图<111>

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Abstract: MBE grown calcium fluoride has been directly patterned using an 100 keV electron beam. An array of dots 4 nm in diameter with a period of 15 nm and lines 7 nm wide are reported. The dependence of the damage process on beam current showed that there is a simple dose requirement of 9 $MUL 10$+3$/ C.cm$+$MIN@2$/, which corresponds to 5 $MUL 10$+8$/ e$+$MIN$m$+$MIN@2$/. Complete holes were not observed. Electron energy loss spectroscopy studies indicate that fluorine has been removed and metallic calcium is left in the damaged region. The damage process was studied with the sample orientated along the $LS@111$GRT direction and tilted away from this axis by up to 10 degrees. No orientation dependence in the hole size or dose required was observed. !7
机译：摘要：使用100 keV电子束直接图案化了MBE生长的氟化钙。报告了直径为4 nm，周期为15 nm的点和宽度为7 nm的线的阵列。损伤过程对射束电流的依赖性表明，有一个简单的剂量要求9 $ MUL 10 $ + 3 $ / C.cm$+$MIN@2$/，相当于5 $ MUL 10 $ + 8 $ / e $ + $ MIN $ / nm $ + $ MIN @ 2 $ /。没有观察到完整的孔。电子能量损失谱研究表明，氟已被除去，金属钙残留在受损区域。以样品沿$ LS @ 111 $ GRT方向定向并从该轴倾斜最多10度的角度研究了损伤过程。没有观察到孔尺寸或所需剂量的取向依赖性。 ！7

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号