Abstract: Carbon is a very suitable acceptor in III - V compounds for device applications requiring thin layers with very low resistivity due to its low diffusion coefficient. We have used a modified, atmospheric pressure MOCVD reactor to grow carbon doped GaAs films by atomic layer epitaxy (ALE) using trimethylgallium (TMGa) as the carbon source. The hole density was controllable from high resistivity to 10$+20$/ cm$+$MIN@3$/. These results were then used as the basis for the study of carbon doping of InGaAs in a layer-by-layer technique using TMGa, triethylindium (TEIn) and arsine (AsH$-3$/). !12
展开▼
