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Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures?

机译:亚微米级生长形态控制:制造光子晶体结构的新途径?

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The feasibility of micrometer scale morphologically controlled 1D stripe arrays by selective hydride vapour phase epitaxy (HVPE) single step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design thus giving rise to a great flexibility. The HVPE growth being mainly governed by the surface kinetics intrinsic anisotropy of the crystal, we have demonstrated that various growth morphologies could be stabilised at a mesoscopic scale by controlling the hierarchy of the growth rates of the low index faces of Ⅲ-Ⅴ crystals via the growth temperature and the composition of the vapour phase. Micrometer scale dielectric periodic structures constituted of 1μm wide GaAs beams alternately stacked with air were then grown by selective HVPE on GaAs substrates. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.
机译:通过选择性氢化物气相外延(HVPE)一步评估了微米级形态控制的一维条带阵列的可行性。 HVPE是一种接近平衡的生长过程,无论图案设计如何,均可提供完美的选择性,因此具有极大的灵活性。 HVPE的生长主要由晶体的表面动力学固有各向异性决定,我们证明了通过控制Ⅲ-Ⅴ晶体的低折射率面的生长速率的层次结构,可以在介观尺度上稳定各种生长形态。生长温度和气相的组成。然后,通过选择性HVPE在GaAs衬底上生长由1μm宽的GaAs束与空气交替堆叠而成的微米级介电周期性结构。最后讨论了用于制造亚微米级结构的HVPE生长技术的潜力。

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