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首页> 外文会议>Advances in sensors and Interfaces, 2009. IWASI 2009 >On exploiting a latchup-based detector via commercial CMOS technologies
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On exploiting a latchup-based detector via commercial CMOS technologies

机译：通过商业CMOS技术开发基于闩锁的检测器

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摘要

The stimulated ignition of latchup effects caused by external radiation has so far proven to be a hidden hazard. Here this effect is described as a novel approach to detect particles by means of a solid-state device susceptible to latchup effects. In addition, the device can also be used as a circuit for reading sensors devices, leaving the capability of sensing to external sensors. The paper first describes the state-of-the-art of the project and its development over the latest years, then the present and future studies are proposed. An elementary cell composed of two transistors connected in a thyristor structure is shown. The study begins using traditional bipolar transistors since the latchup effect is originated as a parasitic circuit composed of such devices. Then, an equivalent circuit built up of MOS transistors is exploited, resulting an even more promising and challenging configuration than that obtained via bipolar transistors. As the MOS transistors are widely used at present in microelectronics devices and sensors, a latchup-based cell is proposed as a novel structure for future applications in particle detection, amplification of signal sensors and radiation monitoring.
机译：迄今为止，已证明由外部辐射引起的闩锁效应的激发点燃是一种隐患。在这里，这种效果被描述为一种通过易受闩锁效应影响的固态设备检测粒子的新颖方法。此外，该设备还可以用作读取传感器设备的电路，而对外部传感器进行感测的能力却保留了下来。本文首先描述了该项目的最新技术及其最近几年的发展，然后提出了当前和未来的研究。示出了由以晶闸管结构连接的两个晶体管组成的基本单元。该研究开始使用传统的双极晶体管，因为闩锁效应是由此类器件组成的寄生电路产生的。然后，利用了由MOS晶体管构成的等效电路，所产生的配置比通过双极晶体管获得的配置更具前景和挑战性。由于MOS晶体管目前广泛用于微电子器件和传感器中，因此提出了一种基于闩锁的单元作为一种新型结构，用于未来在粒子检测，信号传感器的放大和辐射监测中的应用。

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