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首页> 外文会议>Advances in sensors and Interfaces, 2009. IWASI 2009 >Nano-materials and nano-technologies for novel photon detection systems
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Nano-materials and nano-technologies for novel photon detection systems

机译：用于新型光子检测系统的纳米材料和纳米技术

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The transition from macro to micro-sensor systems in the last decades has been made possible by the use of silicon and by development of micro-technology. Semiconductors opened the door to the realization of sensors based on Very Large Scale Integration Systems in which the external information is transduced into an electrical signal managed directly inside the micro-devices by the use of microelectronics. Up to now, the most powerful integrated systems may be considered the Medipix chip for medical imaging and avalanche photodiodes operated in Geiger mode (SiPMs) for photon radiation detection. A similar transition from micro to nano is now knocking at the door. New nanotechnologies allow the realization of finely pixelled surfaces and manipulation of nano- structured materials at a few nanometer scales. Sensors can be created by flipping from a top-down process to a bottom-up approach. To do this, one must develop new materials having similar electrical properties of silicon but chemical properties appropriates for a bottom-up building process. Among the wide variety of materials which can be managed with nano-technological processes, Carbon Nanotubes (CNT) dominate for their unique mechanical and electrical characteristics. They can be grown chemically in a very easy and cheap way, assembled in the desired geometry by means of nano-lithography and directly connected to readout electronics devices. In addition, they can be coupled to silicon substrates to obtain mixed micro-nano structures with intermediate electronic properties. First radiation detectors prototypes have been realized using CNTs grown through a CVD (Chemical Vapour Deposition) process. These devices, sensitive to the radiation in the range from 335 to 850 nm, exibit a relevant increase in the photocurrent toward UV wavelengths both with continuous light and with pulsed radiation. The surface pixellization can be easily achieved using nano-lithography techniques at a very low cost. This approach lo-noks very promising also for the realization of nano-opto-electronic devices directly coupled with readout electronics as in the Medipix chip. In this talk, we propose a review of results obtained by the authors with detector prototypes made of multiwalled carbon nanotubes grown on sapphire and silicon substrates. Electrical and optical properties of detectors have been intensively studied as well as the coupling between nanotubes and silicon substrates. The strong matching between silicon and CNTs found suggests the possibility to realize a finely pixelled large area detector, UV sensitive, with submicron position accuracy.
机译：在过去的几十年中，通过使用硅和微技术的发展，使从宏传感器系统向微传感器系统的转变成为可能。半导体为基于超大规模集成系统的传感器的实现打开了大门，在该系统中，外部信息通过使用微电子技术转换为直接在微设备内部管理的电信号。到目前为止，最强大的集成系统可能被视为用于医学成像的Medipix芯片和以盖革模式（SiPM）运行的雪崩光电二极管，用于光子辐射检测。从微米到纳米的类似转变现在敲响了大门。新的纳米技术可以实现精细像素化的表面，并可以在几纳米规模上处理纳米结构材料。可以通过从上至下的过程过渡到自下而上的方法来创建传感器。为此，必须开发出具有与硅相似的电性能但化学性能适合自下而上的建筑过程的新材料。在可以通过纳米技术工艺进行管理的各种材料中，碳纳米管（CNT）因其独特的机械和电气特性而占主导地位。它们可以以非常容易和便宜的方式化学生长，通过纳米光刻技术组装成所需的几何形状，并直接连接到读出电子设备。另外，它们可以与硅衬底耦合以获得具有中间电子性质的混合的微纳米结构。已经使用通过CVD（化学气相沉积）工艺生长的CNT实现了第一批辐射探测器原型。这些器件对335至850 nm范围的辐射敏感，无论是连续光还是脉冲辐射，都对UV波长有明显的光电流增加。使用纳米光刻技术可以以非常低的成本轻松实现表面像素化。这种方法对于实现与Medipix芯片中直接与读出电子设备耦合的纳米光电设备也非常有希望。在本次演讲中，我们提出对作者使用由蓝宝石和硅衬底上生长的多壁碳纳米管制成的探测器原型获得的结果的回顾。已经对探测器的电学和光学特性以及纳米管和硅基板之间的耦合进行了深入研究。发现的硅与CNT之间的强匹配性表明，有可能实现对像素敏感的，对紫外线敏感的，具有亚微米位置精度的大面积检测器。

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