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首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.1 >Effect of Top Coat and Resist Thickness on Line Edge Roughness
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Effect of Top Coat and Resist Thickness on Line Edge Roughness

机译：顶涂层和抗蚀剂厚度对线边缘粗糙度的影响

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193nm immersion lithography might have to incorporate a top layer coat to prevent leaching and contamination. Additionally, immersion and future lithography will require lowering the photoresist thickness. It has been reported in literature that the diffusion coefficient of small acid molecules reduces as the resist thickness is reduced below 200 nm. The goal of this paper is to understand how, the use of a top coat, changing resist thickness and changing the substrate affect line edge roughness (LER). The study is conducted using dry 193 nm lithography. It was found that the use of a top coat helps to improve LER for 193 nm dry resist process. Improvement in LER with the use of top coat can be explained by a change in intrinsic bias of the resist. LER was also studied as a function of resist thickness, by changing resist thickness from 790 A to 2200 A. It was found that LER is a strong function of resist thickness. At thickness less than about 1300 A, LER increases, with a more pronounced effect as resist thickness is decreased further. LER was also studied as a function of substrate. Two substrates, organic bottom anti-reflection coating (BARC) and an inorganic silicon oxynitride film (SiON), were used in the present study. For ultra-thin resist films, less than 1300 A thick, it was found that the SiON substrate produced greater LER compared with the organic BARC substrate. The data compiled provides a fundamental understanding of LER behavior and will eventually help in better control of LER for future generation devices.
机译：193nm浸没式光刻可能必须结合顶层涂层，以防止浸出和污染。另外，浸没和未来的光刻将需要降低光致抗蚀剂的厚度。据文献报道，随着抗蚀剂厚度减小到200nm以下，小酸分子的扩散系数减小。本文的目的是了解使用面漆，更改抗蚀剂厚度和更改基材如何影响线边缘粗糙度（LER）。该研究使用干式193 nm光刻进行。已经发现，使用面涂层有助于提高193nm干抗蚀剂工艺的LER。使用面漆可以改善LER，可以通过改变抗蚀剂的固有偏压来解释。通过将抗蚀剂厚度从790 A更改为2200 A，还研究了LER作为抗蚀剂厚度的函数。发现LER是抗蚀剂厚度的强函数。在小于约1300 A的厚度下，LER增加，随着抗蚀剂厚度进一步减小，其效果更显着。还研究了LER与底物的关系。在本研究中，使用了两种基材：有机底部抗反射涂层（BARC）和无机氮氧化硅膜（SiON）。对于厚度小于1300 A的超薄抗蚀剂膜，发现与有机BARC衬底相比，SiON衬底产生的LER更大。编译的数据提供了对LER行为的基本了解，最终将有助于更好地控制下一代设备的LER。

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