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首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.1 >Defect marginality screen for resists patterned in random bright field layout
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Defect marginality screen for resists patterned in random bright field layout

机译：缺陷边缘屏幕，用于在随机明场布局中构图的抗蚀剂

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摘要

Resists with robust defect margins for bright field patterning are critical to high resolution lithography. In this paper, we present the application of analytical techniques to screen high resolution photoresists with reduced tendency to form side-lobe defects from diffraction in ePSM and chromeless APSM lithography. Resist candidates are compared based on a novel method to determine accurate high-contrast development etch rate curve data from diluted normality analysis combined with attenuated FTIR. The measured data is applied to determine parameters for aerial image and molecular level resist models which screen potential resists for performance in side-lobe suppression within random mask layout. Feature level prediction and experimental validation is discussed as well as general selection criteria for high resolution, low-defect liability resist materials for severe bright field ePSM and APSM lithography.
机译：具有用于明场图案的强大缺陷余量的抗蚀剂对于高分辨率光刻至关重要。在本文中，我们介绍了分析技术在筛选高分辨率光致抗蚀剂中的应用，这些光致抗蚀剂具有减少的趋势，这些趋势会降低在ePSM和无铬APSM光刻中形成衍射的旁瓣缺陷的可能性。基于一种新颖的方法对抗蚀剂候选物进行比较，以通过稀释的正态性分析与衰减FTIR结合来确定准确的高对比度显影蚀刻速率曲线数据。测量的数据用于确定航空图像和分子水平抗蚀剂模型的参数，这些参数会筛选潜在的抗蚀剂，以在随机掩膜版图内抑制旁瓣抑制性能。讨论了用于严重明场ePSM和APSM光刻的高分辨率，低缺陷责任抗蚀剂材料的特征量预测和实验验证以及一般选择标准。

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