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首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.1 >A Novel Switchable BARC (SBARC) and Process to Improve Pattern Collapse and Defect Control
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A Novel Switchable BARC (SBARC) and Process to Improve Pattern Collapse and Defect Control

机译：一种新颖的可切换BARC（SBARC）和改进模式崩溃和缺陷控制的过程

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To optimize the anti-reflectant material (BARC) in 193nm resist processes requires a careful manipulation of the surface energy of the BARC. In general, the surface energy of the BARC is constant in the unexposed and exposed areas. We have developed a new material with a "switchable" contact angle (SBARC) whose key criteria are as follows: (1) High contact angle at about 70 degrees in the unexposed areas under the resist to prevent developer and water penetration; (2) Maximized adhesive of the SBARC to the resist. (3) Contact angle less than 50 degrees in the exposed areas at the BARC surface to reduce the density of satellite-type defects. The low contact angle in the exposed areas reduces the adhesive forces between the hydrophobic resist residues and the more hydrophilic SBARC surface and thus lowers defects. In addition, the hydrophilic SBARC surface can reduce water drop residues and therefore reduce watermark defects. This paper will also describe our process work to optimize the contact angle of unexposed and exposed BARC surface to reduce pattern collapse and minimize satellite defects. We will also discuss a few methods to improve the surface condition of the SBARC to maximize adhesive forces. Further optimization of the develop process and the refractive index and the absorption coefficient of the SBARC, will provide even better collapse margin for 193-nm resists than the present baseline.
机译：为了在193nm抗蚀剂工艺中优化抗反射材料（BARC），需要仔细控制BARC的表面能。通常，BARC的表面能在未曝光和已曝光区域都是恒定的。我们开发了一种具有“可切换”接触角（SBARC）的新材料，其关键标准如下：（1）在抗蚀剂下的未曝光区域中，约70度的高接触角可防止显影剂和水渗透； （2）最大限度地增加SBARC与抗蚀剂的粘合力。 （3）在BARC表面的暴露区域中的接触角小于50度，以减少卫星型缺陷的密度。暴露区域的低接触角降低了疏水性抗蚀剂残留物与亲水性更高的SBARC表面之间的粘合力，从而降低了缺陷。此外，亲水性SBARC表面可以减少水滴残留，从而减少水印缺陷。本文还将介绍我们的工艺工作，以优化未暴露和已暴露的BARC表面的接触角，以减少图案塌陷并最大程度地减少卫星缺陷。我们还将讨论几种改善SBARC表面状态以最大程度提高粘合力的方法。显影工艺以及SBARC的折射率和吸收系数的进一步优化将为193 nm光刻胶提供比当前基准更好的塌陷裕度。

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