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首页> 外文会议>American Society of Mechanical Engineers(ASME)/Society of Tribologists and Lubrication Engineers(STLE) International Joint Tribology Conference 2004(IJTC 2004) vol.1 pt.A; 20041024-27; Long Beach,CA(US) >IN-SITU TRIBOLOGICAL PROPERTIES MONITORING AND CHEMICAL MECHANICAL CHARACTERIZATION OF PLANARIZATION PROCESS
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IN-SITU TRIBOLOGICAL PROPERTIES MONITORING AND CHEMICAL MECHANICAL CHARACTERIZATION OF PLANARIZATION PROCESS

机译：平面化过程的原位摩擦学特性监测和化学机械表征

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摘要

For faster signal propagation in integrated circuits, new materials with lower dielectric constant (low-k) values are required with copper metal lines. Although integration of low-k materials (k < 3.0) has been demonstrated, but ultra Iow-k materials possess many challenges due to their poor mechanical integrity and weak adhesion to other interconnects. During chemical mechanical planarization (CMP) generation of several defects including delamination of low-k materials is severe problem in the integration of these materials. Different slurries and pad introduces different levels of defect and also batch-to-batch variation in consumables is often makes process more difficult. In this study we have investigated the tribological properties of CMP pad and wafer interface while monitoring coefficient of friction and acoustic emission data. Signals are analyzed in order to online defect monitoring, batch-to-batch consumable variations and different consumables effects.
机译：为了在集成电路中更快地传播信号，铜金属线需要具有较低介电常数（低k）值的新材料。尽管已经证明了低k材料（k <3.0）的集成，但是超低k材料由于其机械完整性差和与其他互连的粘合性差而面临许多挑战。在化学机械平面化（CMP）过程中，包括低k材料的分层在内的若干缺陷在这些材料的集成中是严重的问题。不同的浆料和填充物会引入不同程度的缺陷，而且消耗品的批次间差异通常会使过程更加困难。在这项研究中，我们研究了CMP垫和晶圆界面的摩擦学特性，同时监测了摩擦系数和声发射数据。分析信号以进行在线缺陷监控，批次间消耗品变化和不同消耗品影响。

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