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CHEMICAL MECHANICAL POLISHING FRICTION MEASUREMENTS WITH SILICA ATOMIC FORCE MICROSCOPE TIPS

机译:带有硅原子力显微镜提示的化学机械抛光摩擦测量

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摘要

The feature sizes on Integrated Circuits (ICs) continue to decrease to provide higher device densities and smaller chip designs. To accomplish this, current fabrication and processing technology must be advanced to achieve these goals. In particular, Chemical Mechanical Polishing (CMP), which is used for planarization of wafers and logic circuit components during IC fabrication, can cause severe surface damage to components in the form of delamination or distortion of surface features. CMP utilizes polishing particles suspended between a polymeric pad and the substrate to be polished. To control the process with higher precision the fundamentals of friction between CMP surfaces need to be analyzed. To investigate the friction contributions of the polishing particles in the CMP process, individual CMP abrasive particles are modeled by a silica atomic force microscope (AFM) probe with a radius of curvature on the order of 200 nm that is utilized in a scanning probe microscope (SPM). Lateral forces are measured that occur in simulated polishing of silica substrates and polyurethane pad material in a liquid environment. Results are obtained as a function of pH and environment and are compared with macroscopic friction results obtained using a high precision tribometer with a glass ball.
机译:集成电路(IC)的特征尺寸不断减小,以提供更高的器件密度和更小的芯片设计。为此,必须提高当前的制造和加工技术以实现这些目标。尤其是,化学机械抛光(CMP)用于在IC制造过程中对晶片和逻辑电路组件进行平面化处理,会以分层或表面特征变形的形式对组件造成严重的表面损坏。 CMP利用悬浮在聚合物垫和要抛光的衬底之间的抛光颗粒。为了以更高的精度控制过程,需要分析CMP表面之间的摩擦基础。为了研究抛光颗粒在CMP过程中的摩擦贡献,通过使用扫描探针显微镜(200 nm左右)的二氧化硅原子力显微镜(AFM)探头对单个CMP磨料颗粒进行建模,其曲率半径为200 nm( SPM)。测量在液体环境中模拟抛光二氧化硅基材和聚氨酯垫材料时产生的横向力。获得的结果是pH和环境的函数,并将其与使用带有玻璃球的高精度摩擦计获得的宏观摩擦结果进行比较。

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