首页> 外文会议>American Society of Mechanical Engineers(ASME) Summer Heat Transfer Conference(HT2005); 20050717-22; San Francisco,CA(UA) >HEAT PIPE HEAT SINKS WITH MATCHED COEFFICIENT OF THERMAL EXPANSION SURFACES FOR DIRECT SILICON ATTACH
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HEAT PIPE HEAT SINKS WITH MATCHED COEFFICIENT OF THERMAL EXPANSION SURFACES FOR DIRECT SILICON ATTACH

机译:具有直接硅连接的热膨胀表面匹配系数的热管热沉

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Die level power densities are hitting unprecedented fluxes of over 200W/cm~2, in turn driving the junction-to-case and case-to-sink resistances higher than the sink to ambient resistance. The biggest potential for thermal improvement now lies within the heat sink to device interface. Reduction in this critical interface resistance can be realized through direct attach of the heat sink base to the silicon. Challenges to this approach include the near matching of the coefficient of thermal expansion (CTE) of these two surfaces. Design concepts for a heat pipe heat sink with a CTE similar to that of silicon are investigated. Design concepts take into account materials, heat sink design configurations, and material compatibility with heat pipe working fluids. Prototype test articles were designed and fabricated using a copper/molybdenum/copper laminate as the heat input surface. Test data indicating an evaporator thermal resistance of 0.080 cm~2·℃/W at 290W/cm~2 are presented.
机译:芯片级功率密度达到了前所未有的200W / cm〜2以上的通量,进而使结到外壳和外壳到沉的电阻高于沉到环境的电阻。现在,改善散热的最大潜力在于散热器到设备的接口。可以通过将散热片基座直接连接到硅上来降低该临界界面电阻。这种方法的挑战包括这两个表面的热膨胀系数(CTE)接近匹配。研究了具有类似于硅的CTE的热管散热器的设计概念。设计概念考虑了材料,散热器设计配置以及与热管工作流体的材料兼容性。使用铜/钼/铜层压板作为热输入表面来设计和制造原型测试物品。测试数据表明在290W / cm〜2的条件下蒸发器的热阻为0.080 cm〜2·℃/ W。

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