Low Energy Sputter Deposition and Properties of NiCr Thin Film Resistors for GaAs Integrated Circuits

机译：GaAs集成电路的NiCr薄膜电阻器的低能溅射沉积和性能

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This paper presents a comprehensive study of NiCr thin film resistors developed using a Trikon Sigma sputtering system on 150 mm wafers. The effects of sputtering process parameters and substrate conditions on resistivity and temperature coefficient of resistance (TCR) are discussed. A low energy deposition process with low power and high pressure has been developed to avoid NiCr thin film resistor edge oxidation and achieve high sheet resistance uniformity and low TCR.

机译：本文介绍了使用Trikon Sigma溅射系统在150 mm晶圆上开发的NiCr薄膜电阻器的综合研究。讨论了溅射工艺参数和衬底条件对电阻率和电阻温度系数（TCR）的影响。为了避免NiCr薄膜电阻器边缘氧化并实现高薄层电阻均匀性和低TCR，已经开发了具有低功率和高压的低能量沉积工艺。

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来源
《Annual International Conference on Compound Semiconductor MANufacturing TECHnology(CS MANTECH); 20050411-14; New Orleans,LA(US)》|2005年|P.215-218|共4页
会议地点 New OrleansLA(US)
作者
Jinhong Yang; Paul Miller; Fabian Radulescu; Ron Herring; Kamal Avala; Debra Maxwell; Li Liu; Richard Morton;
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作者单位

TriQuint Semiconductor, 2300 N.E. Brookwood Parkway, Hillllsboro, OR 97124;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
NiCr; TCR; thin film resistors;

机译：NiCr; TCR;薄膜电阻器;

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专利

1. Optimization of NiCr Thin Film Resistor on Semi-insulating-GaAs Substrate in Advanced Integrated Passive Device Process [J] . Cong Wang, Nam-Young Kim IETE Journal of Research . 2012,第4期

机译：先进集成无源器件工艺中半绝缘GaAs衬底上NiCr薄膜电阻的优化
2. Electrical Properties of RF Sputtered NiCr Thin Film Resistors With Cu Contacts [J] . R. K.Nahar, N. M.Devashrayee ElectroComponent Science and Technology: ElectroComponent Science and Technology . 1983,第1期

机译：具有铜触点的RF溅射NiCr薄膜电阻器的电性能
3. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits [J] . Vinayak S, Vyas HP, Muraleedharan K, Thin Solid Films . 2006,第1a2期

机译：GaAs单片微波集成电路的Ni-Cr薄膜电阻器制造
4. Low Energy Sputter Deposition and Properties of NiCr Thin Film Resistors for GaAs Integrated Circuits [C] . Jinhong Yang, Paul Miller, Fabian Radulescu, Annual International Conference on Compound Semiconductor MANufacturing TECHnology . 2005

机译：高能溅射沉积及GaAs集成电路NiCr薄膜电阻器的性能
5. Nanometric structure-property relationship in hafnium oxide thin films made by sputter-deposition. [D] . Vargas, Mirella. 2014

机译：溅射沉积制备氧化ha薄膜的纳米结构-性质关系。
6. Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors [O] . Huan-Yi Cheng, Ying-Chung Chen, Chi-Lun Li, 2016

机译：NiCr和NiCrSi单层和双层纳米薄膜电阻器的物理和电学性质的发展
7. Electrical Properties of RF Sputtered NiCr Thin Film Resistors With Cu Contacts [O] . N. M. Devashrayee, R. K. Nahar 1983

机译：具有Cu触点的RF溅射NiCr薄膜电阻器的电学特性
8. A Low Power NAND Gate Integrated Circuit Employing Thin Film Resistors and Lateral p-n-P Transitors Final Engineering Report [R] . 1970

机译：采用薄膜电阻器和横向p-n-p转换器的低功耗NaND门集成电路最终工程报告

Low Energy Sputter Deposition and Properties of NiCr Thin Film Resistors for GaAs Integrated Circuits

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