High-Brightness Pump Modules Based on the Vertical-Cavity Surface-Emitting Laser Technology

机译：基于垂直腔面发射激光技术的高亮度泵浦模块

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Compact and reliable high-brightness semiconductor laser sources using the VCSEL technology have been developed at the 976-nm wavelengths, with 50-W output power levels out of 100-μm/0.22-NA fibers. These lasers have many advantages such as low manufacturing costs, high-temperature operation, and intrinsic spectral stability. They also offer a path to extremely high-brightness sources by increasing the individual device single-mode power, and by using polarization and spectral combining.

机译：已经开发了使用VCSEL技术的紧凑且可靠的高亮度半导体激光源，其波长为976 nm，在100μm/ 0.22-NA光纤中具有50 W的输出功率。这些激光器具有许多优点，例如较低的制造成本，高温操作和固有的光谱稳定性。它们还通过增加单个设备的单模功率以及使用偏振和光谱组合，提供了通往极高亮度光源的途径。

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《Annual solid state and diode laser technology review;SSDLTR 2009; 20090629-0702;20090629-0702; Newton, MA(US);Newton, MA(US)》|2009年|P.69-73|共5页
会议地点 Newton MA(US);Newton MA(US)
作者
Chuni L. Ghosh; Jean-Francois Seurin; Baiming Guo; Qing Wang; Robert Van Leeuwen; Guoyang Xu; Aleksandr Miglo; Prachi Pradhan;
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Princeton Optronics 1 Electronics Drive Mercerville, NJ 08619;

Princeton Optronics 1 Electronics Drive Mercerville, NJ 08619;

Princeton Optronics 1 Electronics Drive Mercerville, NJ 08619;

Princeton Optronics 1 Electronics Drive Mercerville, NJ 08619;

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正文语种 eng
中图分类激光技术、微波激射技术;
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专利

1. Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off [J] . Jung-Tang CHU, Tien-chang Lu, Hsin-Hung YAO, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4A期

机译：激光剥离制造的光泵浦蓝紫色GaN基垂直腔表面发射激光器的室温操作
2. VERTICAL-CAVITY SURFACE-EMITTING LASERS: Electrically pumped GaN-based VCSELs emit blue and green at room temperature [J] . John Wallace Laser Focus World: The Magazine for the Photonics & Optoelectronics Industry . 2011,第9期

机译：垂直腔表面发射激光器：基于电泵的GaN基VCSEL在室温下发射蓝色和绿色
3. Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers [J] . Jung-Tang Chu, Tien-Chang Lu, Min You, Applied Physics Letters . 2006,第12期

机译：光泵浦的GaN基垂直腔面发射激光器的发射特性
4. High-Brightness Pump Modules Based on the Vertical-Cavity Surface-Emitting Laser Technology [C] . Chuni L. Ghosh, Jean-Francois Seurin, Baiming Guo, Annual solid state and diode laser technology review . 2009

机译：基于垂直腔表面发射激光技术的高亮度泵模块
5. Design and fabrication of long-wavelength vertical-cavity surface-emitting lasers using wafer bonding technologies. [D] . Lin, Hung-Cheng. 2002

机译：利用晶片键合技术设计和制造长波长垂直腔面发射激光器。
6. On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers [O] . W. J. Liu, X. L. Hu, L. Y. Ying, -1

机译：GaN基垂直腔面发射激光器中腔长和散热的重要性
7. Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy [O] . Li, Shuo, Liu, L., Chen, Rongzhang, 2016

机译：开发紧凑型垂直腔面发射激光器用于激光诱导的端部泵浦主动Q开关激光器击穿光谱
8. Novel Epitaxial Growth Technologies for Long-Wavelength (1.1-1.5 micron) Vertical-Cavity Surface-Emitting Lasers and Optical Switches for High- Performance Optical Information Networks [R] . Cheng, J. 1998

机译：用于高性能光信息网络的长波长（1.1-1.5微米）垂直腔面发射激光器和光开关的新型外延生长技术

High-Brightness Pump Modules Based on the Vertical-Cavity Surface-Emitting Laser Technology

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