首页> 外文会议>Asia-Pacific Microwave Conference vol.4; 20051204-07; Suzhou(CN) >Comparison of Electron Device Models Based on Operation-specific Metrics
【24h】

Comparison of Electron Device Models Based on Operation-specific Metrics

机译:基于特定于操作的度量标准的电子设备模型的比较

获取原文

摘要

In the context of the European Union TARGET Network of Excellence (NoE) a specific interest has been oriented to the comparison of different electron device models in order to choose the most suitable for a particular application (e.g. highly linear amplifiers, low phase noise oscillators). To this purpose different metrics have been defined to compare the models behavior under different operating conditions (i.e. dc, ac small-and large-signal). In this paper we apply different metrics proposed under the TARGET NoE in order to compare two models, the Nonlinear Discrete Convolution (NDC) model, based on a table-based black-box approach, and the EEHEMT1 model, based on the classic equivalent circuit approach. The goal is to provide a set of practical criteria for carrying on reliable model comparisons.
机译:在欧盟TARGET卓越网络(NoE)的背景下,特别关注的是比较不同的电子设备模型,以便选择最适合特定应用的模型(例如,高线性放大器,低相位噪声振荡器) 。为此目的,已定义了不同的度量标准以比较不同操作条件下的模型行为(即dc,ac小信号和大信号)。在本文中,我们应用在TARGET NoE下提出的不同度量标准,以便比较两个模型,一个是基于表黑盒方法的非线性离散卷积(NDC)模型,另一个是基于经典等效电路的EEHEMT1模型方法。目的是为进行可靠的模型比较提供一套实用的标准。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号