• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>ASME(American Society of Mechanical Engineers) International Mechanical Engineering Congress: Advanced Energy Systems Division; 20031115-20031121; Washington,DC; US >3D ELECTROTHERMAL SIMULATION OF HETEROSTRUCTURE THIN FILM MICRO-COOLERS
【24h】

3D ELECTROTHERMAL SIMULATION OF HETEROSTRUCTURE THIN FILM MICRO-COOLERS

机译：异质结构薄膜微冷却器的3D电热模拟

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A 3D electrothermal model is used to simulate and optimize Si/SiGe superlattice heterostructure micro-coolers. The model considers thermoelectric/thermionic cooling, heat conduction and Joule heating. It also includes non-ideal effects, such as contact resistance between metal and semiconductor, substrate/heatsink thermal resistance, the side contact resistance. The simulated results match very well with the experimental cooling curves for various device sizes ranging from 60x60μm~2 up to 150x150μm~2. It is found that the key factor limiting maximum cooling is metal-semiconductor contact resistance. The maximum cooling could be doubled if we rerrove the metal-semiconductor contact resistance. The thin film Si/SiGe superlattice micro-coolers can provide cooling power density over 500 W/cm~2 as compared with a few W/cm~2 of bulk Bi_2Te_3 themoelectric coolers. This micro-cooler experimentally demonstrated a maximum cooling of 4.5℃ at room temperature and 7℃ of cooling at 100℃ ambient temperature. It is a promising candidate for microprocessor spot cooling.
机译：3D电热模型用于模拟和优化Si / SiGe超晶格异质结构微冷却器。该模型考虑了热电/热离子冷却，热传导和焦耳加热。它还包括非理想效应，例如金属与半导体之间的接触电阻，基板/散热器热阻，侧面接触电阻。对于从60x60μm〜2到150x150μm〜2的各种尺寸的器件，仿真结果与实验冷却曲线非常吻合。发现限制最大冷却的关键因素是金属-半导体接触电阻。如果我们减小金属-半导体的接触电阻，则最大冷却量可以增加一倍。薄膜Si / SiGe超晶格微冷却器与Bi_2Te_3大型电热冷却器的几W / cm〜2相比，可提供超过500 W / cm〜2的冷却功率密度。该微型冷却器实验证明在室温下最大冷却为4.5℃，在环境温度为100℃时最大冷却为7℃。它是微处理器点冷却的有希望的候选者。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号