首页> 美国卫生研究院文献>Nanoscale Research Letters >Enhanced Dielectric Environment Sensitivity of Surface Plasmon-Polariton in the Surface-Barrier Heterostructures Based on Corrugated Thin Metal Films with Quasi-Anticorrelated Interfaces
【2h】

Enhanced Dielectric Environment Sensitivity of Surface Plasmon-Polariton in the Surface-Barrier Heterostructures Based on Corrugated Thin Metal Films with Quasi-Anticorrelated Interfaces

机译:基于具有拟反相关界面的波纹金属薄膜的表面势垒异质结构中表面等离子-极化子的介电环境敏感性增强

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

A new approach to the formation of a 1D planar periodicity on the front of a plasmonic photodetector based on Schottky barrier is proposed. It allows forming a 1D planar periodicity with corrugation at the “metal/environment” interface by laser interference lithography using embedded chalcogenide wires, whereas the “metal/semiconductor” interface is flat that leads to reducing of surface recombination losses at Shottky barrier in contrary to the conventional technology for forming corrugated metal films on the semiconductor surface requiring chemical etching of the semiconductor substrate. In this case, the metal film interfaces are quasi-anticorrelated as opposed to correlated ones in the conventional technology. It has been theoretically predicted that the polarization sensitivity (T p/T s) strongly depends on the cross-sectional shape of chalcogenide wires and reaches a value of 8. Furthermore, it was theoretically found that the maximum sensitivity of the signal intensity on the environment refractive index is three times larger than for an equivalent structure obtained by conventional technology. Comparison of experimental data for the photocurrent in the case of two types of correlation between metal film interfaces demonstrates good agreement with numerical simulations.
机译:提出了一种基于肖特基势垒在等离激元光电探测器正面形成一维平面周期性的新方法。它允许使用嵌入的硫族化物导线通过激光干涉光刻在“金属/环境”界面处形成带有波纹的一维平面周期性,而“金属/半导体”界面是平坦的,这导致在肖特基势垒处的表面重组损失减少在半导体表面上形成波纹状金属膜的常规技术需要对半导体衬底进行化学蚀刻。在这种情况下,金属膜界面是准反相关的,与传统技术中的相关界面相反。从理论上讲,极化灵敏度(T p / T s)强烈取决于硫族化物导线的横截面形状,并达到值8。环境折射率比通过常规技术获得的等效结构大三倍。在金属膜界面之间的两种相关性的情况下,光电流的实验数据的比较证明了与数值模拟的良好一致性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号