首页> 外文会议>33rd ASPE annual meeting 2018 >COMPENSATING FILM STRESS IN THIN MIRRORS USING ION IMPLANTATION
【24h】

COMPENSATING FILM STRESS IN THIN MIRRORS USING ION IMPLANTATION

机译:通过离子注入补偿薄膜镜中的膜应力

获取原文
获取原文并翻译 | 示例

摘要

Ion implantation is a useful method of compensating for compressive film stress in silicon mirrors. The process is simple, since only three process steps beyond the normal mirror production process are required. We demonstrated reduction of coating stress deformation using ion implantation by a factor of over 20, nearly as effective as patterning stressed films [10], but requiring far fewer process steps. We demonstrated that the film stress to be compensated can be variable from run-to-run with no significant effect on our ability to compensate. In addition, we have demonstrated stability of implanted wafers with the chosen annealing process, to within our metrology repeatability.
机译:离子注入是补偿硅镜中压缩膜应力的有用方法。该过程很简单,因为仅需要常规镜面生产过程之外的三个过程步骤。我们证明了使用离子注入可将涂层应力变形降低20倍以上,几乎与图案化应力膜[10]一样有效,但所需的工艺步骤却少得多。我们证明了要补偿的薄膜应力可以随运行而变化,而对我们的补偿能力没有重大影响。另外,我们已经证明了在选择的退火工艺下所植入晶片的稳定性,这在我们的计量重复性范围内。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号