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首页> 外文学位 >Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors.
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Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors.

机译：用于增强离子注入薄膜和非晶混合氧化物薄膜晶体管性能的新型低温工艺。

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摘要

This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation.;This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals assists in categorizing defects leading to failure/degradation as: oxygen vacancies, thermally activated defects within the bandgap, channel-dielectric interface defects, and acceptor-like or donor-like trap states. Microwave anneal has been confirmed to enhance the quality of thin films, however future work entails extending the use of electromagnetic radiation in controlled ambient to facilitate quick post fabrication anneal to improve the functionality and lifetime of these low temperature fabricated TFTs.
机译：这项研究强调通过应用材料与传导加热和电磁辐射相互作用的基本原理，利用低能量和低温后处理来改善薄膜和薄膜晶体管的性能和寿命。单频微波退火用于快速重结晶硅衬底中离子注入过程中引起的损伤。在存在微波场的情况下，样品的体积加热有利于辐射的快速吸收，从而促进非晶态-晶体界面上的重结晶，除了由于重新定位到取代位而引起的掺杂剂的电活化。与快速热退火的样品相比，结构和电学特性证实了在40秒的退火时间内大量注入的Si发生了再结晶，并且掺杂剂扩散最少。使用微波退火来改善多层薄膜器件的性能，例如，微波退火。薄膜晶体管（TFT）需要深入研究各个层与电磁辐射之间的相互作用。该问题已通过在广泛的应力测试中研究可靠性和失效机制，从而发展了对TFT薄膜和界面的详细理解，从而解决了这一问题。在混合氧化物基薄膜晶体管上施加电和环境应力，例如照明，热和机械应力，这是由于混合氧化物（铟锌氧化物，铟镓锌氧化物）沟道层材料的高迁移率而引起的。半导体参数分析仪用于提取传输特性，可用于得出晶体管的迁移率，亚阈值和阈值电压参数。作为预备步骤，在150°C的几种环境（氧气，形成气体和真空）中进行与聚合物基材兼容的低温后处理退火。使用器件物理原理对低温退火前后的结果进行分析有助于将导致失效/退化的缺陷归类为：氧空位，带隙内的热活化缺陷，沟道-介电界面缺陷以及类似受主或供体的缺陷陷阱状态。微波退火已被证实可以提高薄膜的质量，但是未来的工作需要在受控环境中扩展电磁辐射的使用，以促进快速的后制造退火，从而改善这些低温制造的TFT的功能和使用寿命。

著录项

  • 作者

    Vemuri, Rajitha.;

  • 作者单位

    Arizona State University.;

  • 授予单位 Arizona State University.;
  • 学科 Engineering Electronics and Electrical.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 129 p.
  • 总页数 129
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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