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RF Power Effect of Post-Deposition Oxygen Treatment on HfO_2 Gate Dielectrics

机译：沉积后氧气处理对HfO_2栅介电材料的RF功率效应

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摘要

The radio frequency (RF) power effect of post-deposition O_2 plasma treatment on the physical, electrical, and reliability characteristics of high-k HfO_2 dielectric films was comprehensively investigated in this study. The experimental results indicated that increasing the RF power of post-deposition O_2 plasma treatment resulted in a stoichiometric HfO_2 film, but led to a thinner interfacial layer and the formation of new Hf-Si bonds. Additionally, the electrical characteristics and reliability performance of HfO_2 dielectric films were significantly impacted by the RF power of the post-deposition O_2 plasma treatment. As RF power is less than 30 W, the leakage current density and time-to-breakdown of the O_2 plasma-treated HfO_2 films were improved in comparison with those of the as-deposited samples. However, further increasing RF power exceeding 50 W would cause the continuous degradation in the electrical performance and reliability due to the plasma damage induced by oxygen active spices in a plasma environment. Therefore, performing a post-deposition O_2 plasma treatment process on the as-deposited HfO_2 dielectric films can effectively improve the dielectric's properties. However, the applied RF power is an essential controlling parameter, avoiding serious plasma damage occurrence.
机译：研究了沉积O_2等离子体处理对高k HfO_2电介质膜的物理，电学和可靠性特性的射频（RF）功率影响。实验结果表明，增加沉积后O_2等离子体处理的RF功率会导致化学计量的HfO_2膜，但会导致界面层更薄并形成新的Hf-Si键。此外，HfO_2介电膜的电学特性和可靠性性能受到沉积后O_2等离子体处理的射频功率的显着影响。当RF功率小于30W时，与沉积样品相比，O_2等离子体处理的HfO_2膜的漏电流密度和击穿时间得到改善。但是，进一步增加超过50 W的RF功率将导致电性能和可靠性的持续下降，这是由于在等离子体环境中由氧活性香料引起的等离子体损坏。因此，对沉积的HfO_2电介质膜进行沉积后的O_2等离子体处理工艺可以有效地改善电介质的性能。但是，施加的RF功率是必不可少的控制参数，可避免发生严重的等离子体损坏。

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  • 会议地点 Cancun(MX)
  • 作者

    Yi-Lung Cheng; Tian-Cih Bo;

  • 作者单位

    Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, R.O.C.;

    Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, R.O.C.;

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  • 正文语种 eng
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