Thin-Film Deposition of Silicon Nitrides and Oxides from Trihydridosilanes

机译：三氢硅烷的氮化硅和氧化物的薄膜沉积

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Trihydridosilanes can provide a route for generating self-assembled monolayers on metal substrates. Under mild conditions, these precursors interact with a variety of clean, hydrogenated and fresh metal and metalloid surfaces, including titanium, silicon and gold. All classes of hydridosilanes have minimal interaction with anhydrous oxide surfaces. After initial deposition, SAMs formed from 2-chloroethyltrihydridosilanes may be converted to silicon nitride by pulsing with ammonia or silicon dioxide by pulsing water or oxygen. A proposed mechanism for the initial steps of deposition involves the dissociative adsorption of the silanes with the formation of hydrogen, followed by topmost atom layer insertion and concomitant surface reconstruction.

机译：三氢硅烷可提供在金属基材上生成自组装单层膜的途径。在温和的条件下，这些前体会与各种清洁，氢化和新鲜的金属和准金属表面相互作用，包括钛，硅和金。所有种类的氢化硅烷与无水氧化物表面的相互作用最小。在初始沉积之后，由2-氯乙基三氢硅烷形成的SAM可以通过以氨或二氧化硅的脉冲通过将水或氧气脉冲化而转化为氮化硅。提出的用于沉积的初始步骤的机制包括硅烷的解离吸附和氢的形成，然后是最顶层的原子层插入和伴随的表面重建。

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《Atomic layer deposition applications 10》|2014年|243-249|共7页
会议地点 Cancun(MX)
作者
B. Arkles; Y. Pan; A. E. Kaloyeros;
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Gelest Inc., 11 East Steel Rd. Morrisville, PA 190067, USA;

Gelest Inc., 11 East Steel Rd. Morrisville, PA 190067, USA;

College of Nanoscale Science Engineering, The University at Albany-SUNY, Fuller Rd, Albany, NY 12203, USA;

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2. Memory characteristics of laser-crystallized polycrystalline-silicon silicon-oxide-nitride-oxide-silicon thin-film transistor with location-controlled grain boundary perpendicular to the channel [J] . Lee I-Che Applied Physics Letters . 2012,第24期

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3. Memory characteristics of laser-crystallized polycrystalline-silicon silicon-oxide-nitride-oxide-silicon thin-film transistor with location-controlled grain boundary perpendicular to the channel [J] . I-Che Lee, Chun-Chien Tsai, Hsu-Hang Kuo, Applied Physics Letters . 2012,第24期

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4. Thin-Film Deposition of Silicon Nitrides and Oxides from Trihydridosilanes [C] . B. Arkles, Y. Pan, A. E. Kaloyeros Meeting of the Electrochemical Society . 2014

机译：三水合硅烷硅氮化硅和氧化物的薄膜沉积
5. Gas-surface reactions relevant to indium nitride thin-film deposition on silicon and titanium dioxide substrates. [D] . Wang, Jeng-Han. 2005

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6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

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8. Study of the deposition of single crystal silicon, silicon dioxide and silicon nitride on cold-substrate silicon [R] . Aisenberg, S., Chabot, R. 1969

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Thin-Film Deposition of Silicon Nitrides and Oxides from Trihydridosilanes

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