Design Considerations for ZnO Transistors Made using Spatial ALD

机译：使用空间ALD制造ZnO晶体管的设计注意事项

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have used spatial atomic layer deposition (SALD) to fabricate metal oxide thin-film devices with unusually simple processes. Selective area deposition allows us to fabricate transistors and circuits additively and with digital design variations when used in combination with an inkjet-printed inhibitor. In a second approach, we use the conformal nature of SALD films to produce self-aligned sub-micron channel length vertical transistors that have large alignment tolerances and are suitable for high-performance thin-film electronics. We discuss device design considerations for both architectures.

机译：我们已经使用空间原子层沉积（SALD）通过异常简单的工艺来制造金属氧化物薄膜器件。选择性区域沉积使我们能够与喷墨印刷的抑制剂结合使用，以增材制造和数字设计的变化制造晶体管和电路。在第二种方法中，我们利用SALD膜的保形特性来生产自对准的亚微米沟道长度的垂直晶体管，该晶体管具有较大的对准公差，适用于高性能薄膜电子产品。我们讨论了两种架构的设备设计注意事项。

著录项

来源
《Atomic layer deposition applications 10》|2014年|73-83|共11页
会议地点 Cancun(MX)
作者
Shelby F. Nelson; Carolyn R. Ellinger; Lee W. Tutt;
展开▼
作者单位

Kodak Technology Center, Eastman Kodak Company, Rochester NY 14650 USA;

Kodak Technology Center, Eastman Kodak Company, Rochester NY 14650 USA;

Kodak Technology Center, Eastman Kodak Company, Rochester NY 14650 USA;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Improvement in Sensing Responses to Ammonia Gas for Gas Sensors With Separately Designed Sensing Element Using ALD-Grown ZnO Nanoparticles and Read-Out Element of Top-Gate In-Ga-Zn-O Thin-Film Transistor [J] . Da-Jeong Yun, Gi-Ho Seo, Won-Ho Lee, Electron Devices, IEEE Transactions on . 2017,第5期

机译：使用ALD生长的ZnO纳米粒子和顶部栅极In-Ga-Zn-O薄膜晶体管的读出元件分别设计的传感元件，改善了气体传感器对氨气的传感响应。
2. High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates [J] . Rezk Ayman, Saadat Irfan IEEE Electron Device Letters . 2019,第2期

机译：柔性衬底上生长的高性能ALD铝掺杂ZnO薄膜晶体管
3. High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO [J] . Yang Jun, Zhang Yongpeng, Wu Qianqian, IEEE Transactions on Electron Devices . 2019,第8期

机译：具有超薄，ALD处理的ZrO的高性能1V ZnO薄膜晶体管
4. Design Considerations for ZnO Transistors Made using Spatial ALD [C] . Shelby F. Nelson, Carolyn R. Ellinger, Lee W. Tutt Meeting of the Electrochemical Society . 2014

机译：使用空间ALD制造的ZnO晶体管的设计考虑因素
5. PECVD, spatial ALD, and PEALD zinc oxide thin film transistors . [D] . Sun, Jie. 2008

机译：PECVD，空间ALD和PEALD氧化锌薄膜晶体管。
6. The Role of ALD-ZnO Seed Layers in the Growth of ZnO Nanorods for Hydrogen Sensing [O] . Yangming Lu, Chiafen Hsieh, Guanci Su 2015

机译：ALD-ZnO种子层在用于氢感测的ZnO纳米棒生长中的作用
7. Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications [O] . Bowen Che, Hao Zhang, Jun Yang, 2020

机译：通过ALD沉积温度梯度ZnO，用于高性能晶体管应用
8. Design Considerations and Research Needs for Expanding the Current Perceptual Model of Spatial Orientation into an In-Cockpit Spatial Disorientation Warning System. [R] . Thompson, L. I., Lawson, B. D., Newman, M. C., 2016

机译：将当前空间定位感知模型拓展为驾驶舱空间失调预警系统的设计思路和研究需求。

Design Considerations for ZnO Transistors Made using Spatial ALD

摘要

著录项

相似文献

相关主题

期刊订阅