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首页> 外文期刊>IEEE Transactions on Electron Devices >High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO
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High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO

机译：具有超薄，ALD处理的ZrO的高性能1V ZnO薄膜晶体管

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摘要

The high-performance ZnO thin-film transistors (TFTs) were fabricated on indium tin oxide glass with high-capacitance atomic layer deposition (ALD)-processed ZrO2 as the gate dielectric. The 5-nm ultrathin ZrO2 film showed a very high areal capacitance of 820 nF/cm(2) at 20 Hz, a relatively high breakdown field of 14 MV/cm, and low surface root-mean-square (rms) roughness of 0.22 nm, making it possible for ZnO/ZrO2 TFT to not only be operated by an ultralow operating voltage of 1 V but also present a near theoretical limit subthreshold swing of 69 mV/dec. Furthermore, the ZnO TFT with a 5-nm ZrO2 gate dielectric exhibited excellent performance, such as a high I-on/I-off of 10(7), large field effect mobility of 36.8 cm(2)/Vs, low-density of trapping states (Ntrap) of 1.6 x 10(11) eV(-1)cm(-2), and negligible hysteresis. In addition, the electron transport mode was built to explain the high mobility of nanocrystalline ZnO TFT. As a result, the ultralow operating voltage TFTs exhibited great potential for low-powered electronics applications.
机译：在以高电容原子层沉积（ALD）处理的ZrO2作为栅极电介质的铟锡氧化物玻璃上制造了高性能ZnO薄膜晶体管（TFT）。 5 nm超薄ZrO2膜在20 Hz时显示出非常高的面电容（820 nF / cm（2）），14 MV / cm的较高击穿场和0.22的低表面均方根（rms）粗糙度，使得ZnO / ZrO2 TFT不仅可以以1 V的超低工作电压进行工作，而且还具有接近69 mV / dec的理论极限亚阈值摆幅。此外，具有5nm ZrO2栅极电介质的ZnO TFT具有出色的性能，例如高I-on / I-off为10（7），大场效应迁移率为36.8 cm（2）/ Vs，低密度捕获状态（Ntrap）为1.6 x 10（11）eV（-1）cm（-2）且滞后可以忽略不计。此外，建立了电子传输模式来解释纳米晶ZnO TFT的高迁移率。结果，超低工作电压TFT在低功率电子应用中显示出巨大潜力。

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