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Higher-K Formation in Atomic Layer Deposited Hf_(1-x)Al_xO_y

机译：沉积Hf_（1-x）Al_xO_y的原子层中的高K形成

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摘要

We have successfully deposited ALD Hf_(1-x)Al_xO_y with Al/(A1+Hf)% ranging from 0 to 25% using a sequential precursor pulse method. The crystal phase was confirmed to be a mixed phase of tetragonal with monoclinic using a combination of synchrotron measurement techniques consisting of grazing incidence X-ray diffraction, and grazing incidence extended X-ray absorption fine structure. We observed an enhancement in electrical properties near the crystallization temperature of the Hf_(1-x)Al_xO_y films. In addition, the leakage current was also reduced by a factor of 10 while maintaining a flat-band voltage that is comparable to post deposition annealed (PDA) HfO_2 films processed under identical conditions. An EOT reduction of ～2A EOT with lower gate leakage was obtained for devices with post deposition anneal near the crystallization temperature of the Hf_(1-x)Al_xO_y films.
机译：我们已经使用顺序前驱脉冲方法成功沉积了Al /（A1 + Hf）％范围从0％到25％的ALD Hf_（1-x）Al_xO_y。使用由掠入射X射线衍射和掠入射扩展的X射线吸收精细结构组成的同步加速器测量技术的组合，确认晶相是四方晶与单斜晶的混合相。我们观察到Hf_（1-x）Al_xO_y膜的结晶温度附近的电性能增强。另外，在保持与在相同条件下处理的沉积后退火（PDA）HfO_2膜相当的平带电压的同时，泄漏电流也减小了10倍。对于在Hf_（1-x）Al_xO_y薄膜的结晶温度附近进行了沉积后退火的器件，EOT降低了〜2A EOT，栅极漏电流更低。

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  • 会议地点 Cancun(MX)
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    K. Tapily; S. Consiglio; R. D. Clark; R. Vasic; C.S. Wajda; J. Jordan-Sweet; G. J. Leusink; A. C. Diebold;

  • 作者单位

    TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;

    TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;

    TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;

    College of Nanoscale Science and Engineering, 257 Fuller Rd., Albany, NY 12203, USA;

    TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;

    IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA;

    TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;

    College of Nanoscale Science and Engineering, 257 Fuller Rd., Albany, NY 12203, USA;

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