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首页> 外国专利> ATOMIC LAYER DEPOSITION APPARATUS CAPABLE OF DEPOSITING A PLURALITY OF SECOND ATOMIC LAYERS AND A PLURALITY OF FIRST ATOMIC LAYERS ON A SUBSTRATE WHILE THE SUBSTRATE IS MOVED, AND AN ATOMIC LAYER DEPOSITION METHOD USING THE SAME

ATOMIC LAYER DEPOSITION APPARATUS CAPABLE OF DEPOSITING A PLURALITY OF SECOND ATOMIC LAYERS AND A PLURALITY OF FIRST ATOMIC LAYERS ON A SUBSTRATE WHILE THE SUBSTRATE IS MOVED, AND AN ATOMIC LAYER DEPOSITION METHOD USING THE SAME

机译：能够在衬底上移动多个第二原子层和在衬底上移动多个第一原子层的原子层沉积设备，以及使用该方法的原子层沉积方法

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PURPOSE: An atomic layer deposition apparatus and an atomic layer deposition method using the same are provided to rapidly deposit a film of desired thickness on a substrate by injecting a first source gas, a first purge gas, a second source gas, and a second purge gas at the same time while the substrate or a shower head is moved.;CONSTITUTION: A substrate supporting bar(120) is installed inside a reaction chamber, and supports a substrate(10). A shower head(130) includes a nozzle set capable of injecting a first source gas, a second source gas, and a purge gas on the substrate at the same time. At least one among the substrate supporting bar and the shower head is movably installed according to a first direction. A first source gas injection nozzle(31) is arranged in a first row. A purge gas injection nozzle(41,42) is arranged in a second row. A second source gas injection nozzle(32) is arranged in a third row.;COPYRIGHT KIPO 2010
机译：目的：提供一种原子层沉积设备和使用该原子层沉积设备的原子层沉积方法，以通过注入第一源气体，第一净化气体，第二源气体和第二净化气体在基板上快速沉积所需厚度的膜。底物或淋浴喷头移动的同时产生气体;组成：底物支撑杆（120）安装在反应室内，支撑底物（10）。喷头（130）包括能够同时在基板上喷射第一原料气体，第二原料气体和吹扫气体的喷嘴组。基板支撑杆和喷淋头中的至少一个根据第一方向可移动地安装。第一源气体喷嘴（31）布置在第一行中。在第二排中布置有吹扫气体喷嘴（41，42）。第二源气体喷嘴（32）排在第三行。; COPYRIGHT KIPO 2010

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