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Selective-Area Atomic Layer Deposition of Copper Nanostructures for Direct Electro-Optical Solar Energy Conversion

机译:用于直接光电太阳能转换的铜纳米结构的选择性区域原子层沉积

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We investigate selective-area atomic layer deposition (ALD) of copper onto nanofabricated palladium structures for plasmonic applications in electro-optic conversion devices. We examine arrays of nanofabricated tip shaped electrodes for the formation of geometrically asymmetric tunnel junctions. We find ALD growth to be sensitive to sample pretreatment, and demonstrate that UV-ozone treatment is effective for initiating growth. We show that nucleation density and grain evolution are important properties of growth because ALD deposited topological features are on the same scale as the nanostructures. We predict electric-field intensities within the gap region between electrodes to scale exponentially with ALD growth. We establish the basis for ALD tuning of plasmonic nanostructures.
机译:我们研究电选择性转换中的等离激元应用的铜的选择性区域原子层沉积(ALD)到纳米制造的钯结构上的铜。我们检查了纳米制造的尖端形状的电极阵列的几何不对称隧道结的形成。我们发现ALD的生长对样品预处理很敏感,并证明UV-臭氧处理对于启动生长是有效的。我们表明,成核密度和晶粒演化是重要的生长特性,因为ALD沉积的拓扑特征与纳米结构的尺度相同。我们预测电极之间的间隙区域内的电场强度将随着ALD的增长呈指数级增长。我们建立等离子纳米结构的ALD调整的基础。

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  • 会议地点 Cancun(MX)
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    Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT 06269, USA;

    Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT 06269, USA;

    Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT 06269, USA;

    Department of Engineering, The Pennsylvania State University, Altoona, PA 16601, USA;

    Department of Physics, The Pennsylvania State University, Altoona, PA 16601, USA;

    Department of Physics, The Pennsylvania State University, Altoona, PA 16601, USA;

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