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Atomic Layer Deposition of Ruthenium in Various Precursors and Oxygen Doses

机译：各种前体中的钌原子层沉积和氧剂量

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摘要

Atomic layer deposition (ALD) of Ru films under various precursor and oxidant supply conditions was carried out at 320℃ on silicon wafers. The Ru precursor used was bis(ethylcyclopentadienyl) ruthenium [Ru(EtCp)_2], and oxygen gas was used as the oxidant. The Ru precursor pulse time, oxygen pulse time, and oxygen flow rate were varied, and the effects of these parameters on the morphology of the deposited films were analyzed using scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis. The films showed hollow shell-like bumps, indicating that film growth began with a reaction in the gas phase or in physically adsorbed states. A mismatch between the thermal expansion coefficients of Si and Ru or the existence of residues on the wafer surfaces was suspected to be responsible for the hollow shell-like structures. However, the results of energy-dispersive X-ray spectroscopy (EDS) proved that the latter was not the case.
机译：在320℃的硅晶片上，在各种前驱物和氧化剂供应条件下，Ru膜的原子层沉积（ALD）。所使用的Ru前体是双（乙基环戊二烯基）钌[Ru（EtCp）_2]，并且氧气被用作氧化剂。改变Ru前体脉冲时间，氧气脉冲时间和氧气流速，并使用扫描电子显微镜（SEM）和X射线衍射（XRD）分析来分析这些参数对沉积膜的形态的影响。薄膜显示出空心的壳状凸起，表明薄膜的生长始于气相或物理吸附态的反应。 Si和Ru的热膨胀系数不匹配或晶片表面上存在残留物被怀疑是造成空心壳状结构的原因。但是，能量色散X射线光谱（EDS）的结果证明后者并非如此。

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  • 会议地点 Honolulu HI(US)
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    Jun Woo Kim; Kyung Sik Son; Byungwoo Kim; Woong Kim; Joon Hyung Shim;

  • 作者单位

    Department of Mechanical Engineering, Korea University, Seoul, Korea;

    Department of Mechanical Engineering, Korea University, Seoul, Korea;

    Department of Materials Science and Engineering, Korea University, Seoul, Korea;

    Department of Materials Science and Engineering, Korea University, Seoul, Korea;

    Department of Mechanical Engineering, Korea University, Seoul, Korea;

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