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SYNTHESIS, TAILORED MICROSTRUCTURES AND 'COLOSSAL' MAGNETORESISTANCE IN OXIDE THIN FILMS

机译:氧化物薄膜的合成,尾部微结构和“整体”磁致电阻

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摘要

La_(1-x)M_xMnO_3 (where M = Sr, Ba or Ca) thin films, exhibiting very high or "colossal" magnetoresistance (CMR), have generated much recent scientific and technological interest[1-4]. In addition to raising fundamental questions on insulator-metal transitions and magneto-transport phenomenon, these materials have potential impact on the future of magnetic field sensing and data storage devices. However, the magnetic and magneto-transport properties of these manganite thin films are believed to be dependent on the optimization of the conditions of growth/annealing, composition, oxidation state, epitaxy and the overall microstructure.
机译:La_(1-x)M_xMnO_3(其中M = Sr,Ba或Ca)薄膜具有非常高的或“巨大的”磁阻(CMR),已引起了很多科学和技术兴趣[1-4]。除了提出有关绝缘体-金属过渡和磁传输现象的基本问题之外,这些材料还可能对磁场传感和数据存储设备的未来产生影响。然而,据信这些锰矿薄膜的磁和磁传输性质取决于生长/退火条件,组成,氧化态,外延和整体微观结构的优化。

著录项

  • 来源
  • 会议地点 Berkeley CA(US)
  • 作者单位

    Materials Sciences Divison, E.O. Lawrence Berkeley National Laboratory,Berkeley, CA 94720;

    Silicon Systems Inc., Santa Cruz, CA;

    Materials Sciences Divison, E.O. Lawrence Berkeley National Laboratory,Berkeley, CA 94720;

    Materials Sciences Divison, E.O. Lawrence Berkeley National Laboratory,Berkeley, CA 94720;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TQ174.01;
  • 关键词

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