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Microstructure and Optical Properties of Nanostructural Thin Films Fabricated through Oxidation of Au–Sn Intermetallic Compounds

机译:通过氧化Au-Sn金属间化合物制造的纳米结构薄膜的微观结构和光学性质

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摘要

AuSn and AuSn2 thin films (5 nm) were used as precursors during the formation of semiconducting metal oxide nanostructures on a silicon substrate. The nanoparticles were produced in the processes of annealing and oxidation of gold–tin intermetallic compounds under ultra-high vacuum conditions. The formation process and morphology of a mixture of SnO2 and Au@SnOx (the core–shell structure) nanoparticles or Au nanocrystalites were carefully examined by means of spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) combined with energy-dispersive X-ray spectroscopy (EDX). The annealing and oxidation of the thin film of the AuSn intermetallic compound led to the formation of uniformly distributed structures with a size of ∼20–30 nm. All of the synthesized nanoparticles exhibited a strong absorption band at 520–530 nm, which is typical for pure metallic or metal oxide systems.
机译:在硅衬底上形成半导体金属氧化物纳米结构期间,使用AUSN和AUSN2薄膜(5nm)作为前体。在超高真空条件下,在金 - 锡金属间化合物的退火和氧化过程中制备纳米颗粒。通过光谱椭圆形测量(SE),X射线光电子能谱(XPS),扫描电子显微镜(扫描电子显微镜)仔细检查SnO2和Au @ snox(核壳结构)纳米颗粒或Au纳米晶体的混合物的形成过程和形态。 SEM)和透射电子显微镜(TEM)与能量分散X射线光谱(EDX)结合。 AUSN金属间化合物薄膜的退火和氧化导致形成均匀分布的结构,尺寸为〜20-30nm。所有合成的纳米颗粒在520-530nm处表现出强吸收带,其典型的纯金属或金属氧化物系统。

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