Latest progress in gallium-oxide electronic devices

著录项

• 来源
  《Conference on Oxide-based Matericals and Devices》|2018年|105330O.1-105330O.6|共6页
• 会议地点 San Francisco(US)
• 作者

  Masataka Higashiwaki; Man Hoi Wong; Keita Konishi; Yoshiaki Nakata; Chia-Hung Lin; Takafumi Kamimura; Lingaparthi Ravikiran; Kohei Sasaki; Ken Goto; Akinori Takeyama; Takahiro Makino; Takeshi Ohshima; Akito Kuramata; Shigenobu Yamakoshi; Hisashi Murakami; Yoshinao Kumagai;

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• 作者单位

  National Institute of Information and Communications Technology Koganei Tokyo 184-8795 Japan;

  National Institute of Information and Communications Technology Koganei Tokyo 184-8795 Japan Department of Applied Chemistry Tokyo University of Agriculture and Technology Koganei Tokyo 184-8588 Japan;

  Tamura Corporation Sayama Saitama 350-1328 Japan;

  Department of Applied Chemistry Tokyo University of Agriculture and Technology Koganei Tokyo 184-8588 Japan Tamura Corporation Sayama Saitama 350-1328 Japan;

  Xational Institutes for Quantum and Radiological Science and Technology Takasaki Gunma 370-1292 Japan;

  Department of Applied Chemistry Tokyo University of Agriculture and Technology Koganei Tokyo 184-8588 Japan;

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• 会议组织
• 原文格式 PDF
• 正文语种
• 中图分类
• 关键词

  Gallium oxide (Ga_2O_3); power electronics; harsh environment electronics; metal-oxide-semiconductor field-effect transistor (MOSFET); Schottky barrier diode (SBD);

  机译：氧化镓（Ga_2O_3）;电力电子；恶劣环境的电子产品；金属氧化物半导体场效应晶体管（MOSFET）;肖特基势垒二极管（SBD）;