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In-situ beam position monitoring system for electron-beam lithography

机译：电子束光刻原位控制系统

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Abstract: Novel beam monitoring methods for electron beam lithography systems were studied. In order to achieve high patterning accuracy, precise control of the beam position and of the beam exposure time is important. In conventional electron beam writing system, the written patterns are measured in order to evaluate the accuracy of the writing system. In this paper, two in-situ beam monitoring methods are proposed. One is the beam position monitoring method using a magnification lens and a microchannel plate (MCP) with a CCD camera. The beam image data projected on the MCP were observed using the prototype electron optical system. The beam position could be calculated by an image processing method. Also the simulation result of the conceptual in-situ beam monitoring system was shown. The other one is the beam blanking response measurement method using a fast MCP which has good pulse resolution and a fast response. The MCP output of pulse waveforms correlated with the beam blanking signal were observed with a good time resolution. !4
机译：摘要：研究了用于电子束光刻系统的新型束监视方法。为了获得高的图案形成精度，精确控制光束位置和光束曝光时间很重要。在常规的电子束写入系统中，测量所记录的图案以便评估写入系统的准确性。本文提出了两种现场束监测方法。一种是使用放大透镜和带有CCD摄像机的微通道板（MCP）的光束位置监视方法。使用原型电子光学系统观察了投射在MCP上的光束图像数据。光束位置可以通过图像处理方法来计算。还显示了概念性现场光束监测系统的仿真结果。另一种是使用具有良好脉冲分辨率和快速响应的快速MCP的光束消隐响应测量方法。观察到与光束消隐信号相关的脉冲波形的MCP输出具有良好的时间分辨率。 ！4

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