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首页> 外文会议>Cleaning and surface conditioning technology in semiconductor device manufacturing 11 >Surfactants as an Additive to Wet Cleaning Solutions for Plasma Etch Residue Removal: Compatibility to a Porous CVD-SiCOH Ultra Low-k Dielectric Material
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Surfactants as an Additive to Wet Cleaning Solutions for Plasma Etch Residue Removal: Compatibility to a Porous CVD-SiCOH Ultra Low-k Dielectric Material

机译：表面活性剂作为等离子去除残留湿法清洁解决方案的添加剂：与多孔CVD-SiCOH超低k介电材料的兼容性

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摘要

With decreasing feature sizes and integration of porous low-k dielectrics within the interconnect system of integrated circuits, plasma etch residue removal becomes challenging. Plasma cleaning processes are known to degrade low-k material's properties and wet cleaning becomes a promising alternative. Using water based cleaning solutions turns out to be critical as they may not be able to wet low-energy residue surfaces or to penetrate into small features. Lowering the surface tension of the solutions will be essential and the application of surfactants is a promising approach. We investigated the static and dynamic surface tension of different surfactant solutions in DIW and their compatibility to a porous CVD-SiCOH low-k dielectric. The choice of the rinsing solution applied after surfactant treatment turned out to be essential for removing residual surfactant species. Optical, electrical and structural analysis showed that in contrast to DIW an IPA-rinse is able to remove remaining surfactant species.
机译：随着特征尺寸的减小以及多孔低k电介质在集成电路互连系统中的集成，等离子蚀刻残留物的去除变得具有挑战性。已知等离子清洗工艺会降低低k材料的性能，而湿清洗成为有希望的替代方法。事实证明，使用水基清洁溶液非常关键，因为它们可能无法润湿低能耗的残留物表面或渗入小的部件。降低溶液的表面张力将是必不可少的，表面活性剂的应用是一种有前途的方法。我们研究了DIW中不同表面活性剂溶液的静态和动态表面张力以及它们与多孔CVD-SiCOH低k电介质的相容性。结果表明，选择表面活性剂处理后的冲洗溶液对于去除残留的表面活性剂至关重要。光学，电学和结构分析表明，与DIW相比，IPA冲洗能够去除残留的表面活性剂。

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