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首页> 外文会议>CMP-MIC Catalog no.06 IMIC - 1000P; International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference(CMP-MIC); 20060221-23; Fremont,CA(US) >CONTROL OF THE MULTI-SCALE NON-UNIFORMITIES IN CU CMP BY FACE-UP POLISHING
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CONTROL OF THE MULTI-SCALE NON-UNIFORMITIES IN CU CMP BY FACE-UP POLISHING

机译：正面抛光对铜化学机械抛光多尺度不均匀性的控制

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摘要

In Cu CMP, the coated wafers are generally polished facedown on rotary polishers. The wafer-scale polishing rate is fairly uniform, but not optimal. As the feature size shrinks to the nanoscale (90nm or smaller) in microprocessors and the flash-memory devices, however, Cu dishing and dielectric erosion have emerged as critical issues. Thus, we propose rotary, face-up CMP tool "architecture" for controlling the wafer-scale polishing non-uniformity. The concept is based on an integrated Cu CMP model we have developed recently. In this paper, the architecture, kinematics, and preliminary experimental results are presented.
机译：在Cu CMP中，通常在旋转抛光机上将面朝下的表面抛光。晶片级抛光速率相当均匀，但不是最佳的。然而，随着特征尺寸缩小到微处理器和闪存设备中的纳米级（90nm或更小），Cu凹陷和电介质腐蚀已成为关键问题。因此，我们提出了旋转的，面朝上的CMP工具“体系结构”，用于控制晶圆级抛光的不均匀性。该概念基于我们最近开发的集成Cu CMP模型。本文介绍了体系结构，运动学和初步的实验结果。

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