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首页> 外文会议>Compound semiconductors: thin-film photovoltaics, LEDs, and smart energy controls >Effects of Growth Conditions on Secondary Phases in CZTSe Thin Films Deposited by Co-evaporation
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Effects of Growth Conditions on Secondary Phases in CZTSe Thin Films Deposited by Co-evaporation

机译：生长条件对共蒸镀CZTSe薄膜第二相的影响

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High temperature multi-source co-evaporation has been the most successful approach to fabricate record efficiency Cu(InGa)Se_2 devices, yet many groups have been unable to replicate this success when transferring these methods to the Cu_2ZnSnSe_4 system. The difficulties stem from the dramatic differences in the thermochemical properties which result in decomposition and loss of volatile species, such as Zn and SnSe, at temperatures needed for growth. In co-evaporation, decomposition and element loss must be managed throughout the entire growth process, from the back contact interface to the final terminating surface of the film. The beginning and ending phases of deposition encompass different kinetic regimes suggesting a phased approach to growth may be helpful. A series of depositions with different effusion profiles were used to demonstrate the effects of decomposition during different stages of growth. Secondary phase detection can be challenging in CZTSe, but a combination of SEM imaging and thin cross-section depth profile by EDS were found to best identify and locate the secondary phases that occur during different phases of growth for co-evaporated Cu_2ZnSnSe_4 films. Deposition with a uniform incident flux followed by shuttered vacuum cool-down yielded films with a ZnSe phase at the absorber/Mo interface and Cu-rich composition at the surface of the exposed film. Devices from these absorber layers never exceeded conversion efficiencies of 1%. Decomposition at the surface could be prevented by continuing effusion of Se and Sn during the cool-down of the substrate. Resulting films demonstrated more faceted grains as well as significantly improved device performance. Secondary phases that traditionally form at the back contact during the beginning of growth were minimized by decreasing the substrate temperature to 300℃ during the initial stages of deposition which reduced the ZnSe formed at the Mo interface. The thermochemical origin of the secondary phases will be discussed and the performance of representative devices will be presented.
机译：高温多源共蒸发是制造记录效率高的Cu（InGa）Se_2器件的最成功方法，但是当将这些方法转移到Cu_2ZnSnSe_4系统时，许多小组仍无法复制这种成功。困难源于热化学性质的巨大差异，在生长所需的温度下会导致诸如Zn和SnSe的挥发性物质分解和损失。在共蒸发中，必须从背面接触界面到薄膜的最终终止表面，在整个生长过程中控制分解和元素损失。沉积的开始阶段和结束阶段包含不同的动力学机制，这表明分阶段的生长方法可能会有所帮助。使用一系列具有不同渗出曲线的沉积物来证明在不同生长阶段分解的影响。在CZTSe中，次生相的检测可能具有挑战性，但是结合SEM成像和EDS的薄截面深度剖面发现，可以最佳地识别和定位在共蒸发Cu_2ZnSnSe_4薄膜的不同生长阶段发生的次生相。用均匀的入射通量进行沉积，然后关闭真空冷却，得到的薄膜在吸收剂/ Mo界面处具有ZnSe相，在裸露的薄膜表面处具有富Cu组成。来自这些吸收层的器件从未超过1％的转换效率。通过在基板冷却期间持续喷出Se和Sn可以防止表面分解。所得的膜显示出更多的多面晶粒，并且显着改善了器件性能。通过在沉积的初始阶段将衬底温度降低至300℃，从而减少了在Mo界面形成的ZnSe，可以将生长开始时传统上在背接触处形成的第二相减至最少。将讨论第二相的热化学起源，并将介绍代表性装置的性能。

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