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首页> 美国卫生研究院文献>Nanomaterials >Growth of CaxCoO2 Thin Films by A Two-Stage Phase Transformation from CaO–CoO Thin Films Deposited by Rf-Magnetron Reactive Cosputtering
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Growth of CaxCoO2 Thin Films by A Two-Stage Phase Transformation from CaO–CoO Thin Films Deposited by Rf-Magnetron Reactive Cosputtering

机译：射频磁控反应共溅射沉积CaO–CoO薄膜的两相转变法生长CaxCoO2薄膜

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The layered cobaltates AxCoO2 (A: alkali metals and alkaline earth metals) are of interest in the area of energy harvesting and electronic applications, due to their good electronic and thermoelectric properties. However, their future widespread applicability depends on the simplicity and cost of the growth technique. Here, we have investigated the sputtering/annealing technique for the growth of CaxCoO2 (x = 0.33) thin films. In this approach, CaO–CoO film is first deposited by rf-magnetron reactive cosputtering from metallic targets of Ca and Co. Second, the as-deposited film is reactively annealed under O2 gas flow to form the final phase of CaxCoO2. The advantage of the present technique is that, unlike conventional sputtering from oxide targets, the sputtering is done from the metallic targets of Ca and Co; thus, the deposition rate is high. Furthermore, the composition of the film is controllable by controlling the power at the targets.
机译：层状钴酸盐AxCoO2（A：碱金属和碱土金属）因其良好的电子和热电性能而在能量收集和电子应用领域中受到关注。但是，它们未来的广泛应用取决于生长技术的简单性和成本。在这里，我们研究了溅射/退火技术来生长CaxCoO2（x = 0.33）薄膜。在这种方法中，首先通过射频磁控反应共溅射从Ca和Co的金属靶上沉积CaO-CoO膜。其次，将沉积的膜在O2气流下进行反应退火，以形成CaxCoO2的最终相。本技术的优点在于，与常规的从氧化物靶材进行溅射不同，溅射是从Ca和Co的金属靶材进行的。因此，沉积速率高。此外，可以通过控制靶的功率来控制膜的组成。

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