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Development of CdTe on Si Heteroepilayers for Controlled PV Material and Device Studies

机译：用于控制光伏材料和器件研究的Si异质外延层上CdTe的开发

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The objective of the National Renewable Energy Laboratory's (NREL) current three-year CdTe plan under the U.S. Department of Energy's SunShot Initiative is to identify primary mechanisms that limit the open-circuit voltage and fill factor of polycrystalline CdTe photovoltaic (PV) devices, and develop CdTe synthesis processes and/or device designs that avoid these limitations. Part of this project relies on analysis of crystalline materials and pseudo-crystalline CdTe layers where point and extended defects can be introduced sequentially without the complications of extensive impurities and grain boundaries that are typical of present polycrystalline films. The ultimate goals of the project include producing CdTe PV devices that demonstrate ≥20% conversion efficiency, while significantly improving our understanding of processes and materials capable of attaining cost goals of ＜$0.50 per watt. While NREL is investigating several options for the routine fabrication of high-quality CdTe layers, one pathway involves CdTe molecular beam heteroepitaxy (MBE) on Si in collaboration with the University of Illinois at Chicago. Although CdTe/Si heteroepitaxy is relatively unfamiliar to researchers in the PV community, it has been used successfully for more than 20 years to produce high-quality CdTe surfaces required for commercial production of large-area single-crystal HgCdTe infrared detectors and focal-plane arrays. The process involves chemical and thermal preparation of Si (211) wafers, followed by deposition of As-passivation and ZnTe-accommodation layers. MBE-grown CdTe layers deposited on top of this "template" have been shown to demonstrate low etch-pit density (EPD, preferably ≤ ～5×10~5 cm~(-2)) and high structural quality (full width at half maximum ～ 60 arcs). These initial studies indicate that 10-μm-thick CdTe layers on Si are indeed epitaxial with cathodoluminescence-determined dislocation density consistent with historic EPD measurements, and that recombination rates are distinct from either as-deposited polycrystalline or crystalline materials.
机译：美国能源部的SunShot Initiative计划下的国家可再生能源实验室（NREL）当前的三年CdTe计划的目标是确定限制多晶CdTe光伏（PV）器件的开路电压和填充因子的主要机制，以及开发避免这些限制的CdTe合成工艺和/或设备设计。该项目的一部分依赖于对晶体材料和伪晶体CdTe层的分析，在这些层中可以顺序引入点缺陷和扩展缺陷，而不会出现目前多晶膜常见的大量杂质和晶界的复杂情况。该项目的最终目标包括生产出转换效率≥20％的CdTe光伏器件，同时极大地增进了我们对能够实现低于每瓦0.50美元成本目标的工艺和材料的理解。尽管NREL正在研究常规制造高质量CdTe层的几种方法，但其中一条途径是与伊利诺伊大学芝加哥分校合作在Si上进行CdTe分子束异质外延（MBE）。尽管CdTe / Si异质外延对于PV社区的研究人员来说相对陌生，但已成功使用了20多年，以生产大面积单晶HgCdTe红外探测器和焦平面商业化生产所需的高质量CdTe表面。数组。该过程包括化学和热制备Si（211）晶片，然后沉积As钝化层和ZnTe适应层。已显示在此“模板”上沉积的MBE生长CdTe层显示出低蚀刻坑密度（EPD，优选≤〜5×10〜5 cm〜（-2））和高结构质量（半高全宽）最大〜60弧）。这些初步研究表明，Si上10μm厚的CdTe层确实是外延的，由阴极发光确定的位错密度与历史上的EPD测量值一致，并且复合速率与沉积的多晶或晶体材料不同。

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