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Carrier density in p-type ZnTe with nitrogen and copper doping

机译：氮和铜掺杂的p型ZnTe的载流子密度

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摘要

In this paper, we demonstrate deposition methods and conditions that allow the control of the electrical properties of doped ZnTe grown by RF magnetron sputtering using both nitrogen and copper as dopants. The carrier density of the films was characterized using a van der Pauw Hall effect measurement method. We demonstrate how the concentration of nitrogen in the plasma during the growth of the film impacts the conductivity of the ZnTe films. Films with hole concentrations in excess of 10~(18) cm~(-3) and a high degree of crystallinity were successfully grown. Similarly, we demonstrate that the hole concentration in the Cu-doped ZnTe can be varied by varying the amount of copper introduced in the films. We also observe that annealing the copper doped ZnTe films increases the carrier density, whereas annealing the nitrogen doped ZnTe films causes a decrease in carrier concentration and conductivity.
机译：在本文中，我们演示了沉积方法和条件，可以控制通过使用氮和铜作为掺杂剂的RF磁控溅射法生长的掺杂ZnTe的电性能。使用van der Pauw Hall效应测量方法表征膜的载流子密度。我们证明了膜生长过程中等离子体中氮的浓度如何影响ZnTe膜的电导率。成功生长出空穴浓度超过10〜（18）cm〜（-3）且具有高结晶度的薄膜。类似地，我们证明了可以通过改变膜中引入的铜量来改变掺杂Cu的ZnTe中的空穴浓度。我们还观察到，对铜掺杂的ZnTe薄膜进行退火会增加载流子密度，而对氮掺杂的ZnTe薄膜进行退火会导致载流子浓度和电导率降低。

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