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首页> 外文会议>Conference on Advances in Neutron Scattering Instrumentation, Jul 7-8, 2002, Seattle, Washington, USA >Analyses and Simulations of the Spin Echo Small-Angle Neutron Scattering Instrument
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Analyses and Simulations of the Spin Echo Small-Angle Neutron Scattering Instrument

机译：自旋回波小角中子散射仪的分析与仿真

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摘要

Spin echo small-angle neutron scattering (SESANS) is a novel technique that measures correlation functions in real space. Recent theoretical study on SESANS has enabled the interpretation of this correlation function. It has also revealed the range of applications and limitations of the SESANS technique. On a two-dimensional SESANS instrument, the experimental correlation function is the pair-distance distribution function of the scattering particle. On a one-dimensional instrument, the correlation function is an integral function of the pair-distance distribution function, SESANS is suitable for studying particles from a nanometer to a few tens of micrometers in size, a range that is similar to that covered by the traditional Bonse-Hart ultrasmall-angle neutron scattering instrument. The greatest advantage of SESANS lies in the fact that it can use divergent neutron beams, thus drastically increasing the counting rate. The resolution of a SESANS instrument is limited by the integrated Larmor precession field and by the neutron wavelength. Because any SESANS instrument will have a limited momentum transfer coverage, truncation errors can result in the measured correlation functions. The effect of the inhomogeneity of the Larmor field can be handled as smearing. On a one-dimensional SESANS instrument, the off-plane scatterings also result in smearing effects.
机译：自旋回波小角中子散射（SESANS）是一种测量真实空间中相关函数的新技术。最近关于SESANS的理论研究使得能够解释这种相关函数。它还揭示了SESANS技术的应用范围和局限性。在二维SESANS仪器上，实验相关函数是散射粒子的成对距离分布函数。在一维仪器上，相关函数是对距离分布函数的积分函数，SESANS适用于研究尺寸从纳米到几十微米的颗粒，该范围类似于传统的Bonse-Hart超小角中子散射仪。 SESANS的最大优势在于它可以使用发散的中子束，从而大大提高了计数率。 SESANS仪器的分辨率受集成的拉莫尔进动场和中子波长的限制。由于任何SESANS仪器的动量传递覆盖范围都有限，因此截断误差会导致测得的相关函数。拉莫尔场的不均匀性的影响可以作为拖影处理。在一维SESANS仪器上，平面外散射也会导致拖尾效应。

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