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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Feasibility study of non-topcoat resist for 22nm node devices
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Feasibility study of non-topcoat resist for 22nm node devices

机译：非表面涂层抗蚀剂用于22nm节点器件的可行性研究

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摘要

Subsequent to 45 nm node, immersion lithography using topcoat process is approaching its next step for mass production. However, microfabrication using immersion topcoat leads to increase in cost due to increase in process steps. In order to deal with this problem, high throughput scanners equipped with a wafer stage which moves at higher speed are under development. Furthermore, as resist process compatible with such high speed scanners, non-topcoat resist is available and seems promising in reducing costs of the resist process. Non-topcoat resist contains hydrophobic additives which are eccentrically located near the film surface. Because non-topcoat resist enables the formation of a more hydrophobic surface, non-topcoat resist process is more suitable for high-speed scanning than topcoat resist process. In the topcoat process, the function of topcoat material and resist material is separated. That is, the resist material and the topcoat material are responsible for lithographic performance and immersion scanning performance, respectively. However, the non-topcoat resist is expected both performances. That is, the non-topcoat resist are required a fine resist profile, small LWR, and low development defects at high speed immersion scanning. In this paper, we report the application of non-topcoat resist in 22 nm node devices. We investigate the influence of hydrophobic additives on imaging performance in several base polymers. Additionally, the influence of chemical species, molecular weight and amount of hydrophobic additive are investigated. Scan performance is also estimated by dynamic receding contact angle using pin scan tool. 22nm node imaging performance is evaluated using Nikon NSR-S610C. The surface characteristics and lithographic performance of non-topcoat resist for 22 nm node devices are discussed.
机译：在45 nm节点之后，采用面涂工艺的浸没式光刻技术正接近批量生产的下一步。然而，由于工艺步骤的增加，使用浸没面漆的微细加工导致成本增加。为了解决该问题，正在开发装备有以更高速度移动的晶片台的高通量扫描仪。此外，由于与这种高速扫描仪兼容的抗蚀剂工艺，可以使用非面涂层抗蚀剂，并且在降低抗蚀剂工艺的成本方面似乎很有希望。非面漆抗蚀剂包含疏水性添加剂，这些添加剂偏心地位于薄膜表面附近。因为非面漆抗蚀剂能够形成更疏水的表面，所以非面漆抗蚀剂工艺比面漆抗蚀剂工艺更适合于高速扫描。在面漆工艺中，面漆材料和抗蚀剂材料的功能是分开的。即，抗蚀剂材料和面涂层材料分别负责光刻性能和浸没扫描性能。然而，预期非面涂层抗蚀剂的两种性能。即，在高速浸没扫描中，要求非面涂层抗蚀剂具有良好的抗蚀剂轮廓，小的LWR和低显影缺陷。在本文中，我们报告了非面漆抗蚀剂在22 nm节点器件中的应用。我们研究了几种基础聚合物中疏水添加剂对成像性能的影响。另外，研究了化学种类，分子量和疏水性添加剂的量的影响。还可以使用销钉扫描工具通过动态后退接触角来估算扫描性能。使用Nikon NSR-S610C评估22nm节点成像性能。讨论了用于22 nm节点器件的非面漆抗蚀剂的表面特性和光刻性能。

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