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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Resist fundamentals for resolution, LER and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects
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Resist fundamentals for resolution, LER and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects

机译：抵抗分辨率，LER和灵敏度（RLS）性能折衷以及与微桥缺陷的关系的基础

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摘要

High NA immersion and EUV lithography processes are challenged to meet stringent control requirements for the 22 nm node and beyond. Lithography processes must balance resolution, LWR and sensitivity (RLS) performance tradeoffs while scaling resist thickness to 100 nm and below. Hardware modules including coat, bake and development seek to enable resist processes to balance RLS limitations. The focus of this paper is to study the fundamentals of the RLS performance tradeoffs through a combination of calibrated resist simulations and experiments. This work seeks to extend the RLS learning through the creation of calibrated resist models that capture the exposure kinetics, acid diffusion properties, deprotection kinetics and dissolution response as a function of PAG loading in a 193 nm polymer system. The calibrated resist models are used to quantify the resolution and sensitivity performance tradeoffs as well as the degradation of resist contrast relative to image contrast at small dimensions. Calibrated resist simulations are capable of quantifying resolution and sensitivity tradeoffs, but lack the ability to model LWR. LWR is challenging to simulate (lattice models) and to measure; due to the dependence on spectral frequency. This paper seeks to use micro-bridging experiments as means to better understand the statistical nature of LWR. Micro-bridging analysis produces a statistical distribution of "discrete bridging events" that encompasses practical variations across scanner, track and resist. Micro-bridging and LWR experiments are done using a 1.2 NA immersion system on 45 nm space structures (90 nm pitch) as a means to demonstrate the concept, but the methodology can also be used to study EUVL processes as the technology matures. The understanding of the RLS performance tradeoffs enables TEL to develop future hardware and processes that support industry scaling goals.
机译：高NA浸入和EUV光刻工艺面临挑战，以满足对22 nm及更高节点的严格控制要求。光刻工艺必须在平衡分辨率，LWR和灵敏度（RLS）性能之间取得平衡，同时将抗蚀剂厚度缩放到100 nm以下。包括涂布，烘烤和显影在内的硬件模块寻求使抗蚀剂工艺能够平衡RLS限制。本文的重点是通过校准的抗蚀剂模拟和实验相结合的方法来研究RLS性能折衷的基础。这项工作旨在通过创建校准的抗蚀剂模型来扩展RLS学习，该模型可以捕获暴露动力学，酸扩散特性，脱保护动力学和溶解反应，作为193 nm聚合物系统中PAG负载的函数。校准后的抗蚀剂模型用于量化分辨率和灵敏度性能之间的权衡，以及在小尺寸下抗蚀剂对比度相对于图像对比度的降低。校准后的抗蚀剂仿真能够量化分辨率和灵敏度之间的权衡，但缺乏对LWR建模的能力。 LWR在模拟（晶格模型）和测量方面具有挑战性。由于对频谱频率的依赖。本文试图使用微桥实验作为手段来更好地了解轻水堆的统计性质。微桥接分析产生“离散桥接事件”的统计分布，其中包括扫描仪，跟踪和抗蚀剂之间的实际变化。使用1.2 NA浸没系统在45 nm空间结构（90 nm间距）上进行微桥和LWR实验，以证明这一概念，但是随着技术的成熟，该方法也可用于研究EUVL工艺。对RLS性能折衷的理解使TEL能够开发支持行业扩展目标的未来硬件和流程。

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