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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Effect of resist polymer molecular weight on EUV lithography
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Effect of resist polymer molecular weight on EUV lithography

机译：抗蚀剂聚合物分子量对EUV光刻的影响

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摘要

EUV lithography performances of resist materials with different molecular weight of polymer were investigated. EUV exposure experiment using a SFET at Selete clearly showed that line-width roughness (LWR) and 1:1 half-pitch (hp) resolution were each improved using the polymers with middle and low molecular weights. These polymers showed high dissolution contrast relative to polymer with high molecular weight. Mask linearity data also showed that the polymer with low molecular weight gave a linear dependence on critical dimension (CD) against mask size down to hp 26 nm. Thermal analysis of resist film revealed that thermal glass transition temperature (Tg) was dramatically decreased from 190 ℃ to 110 ℃ with decreasing molecular weight from high to low. In contrast with Tg which directly reflects mobility of polymer, exposure latitude (EL) was increased from 12.3 % to 14.5 % at hp 32 nm by decreasing molecular weight of polymer. Similarly, iso-dense bias was also improved by utilizing the low molecular weight polymer. Combination of PAG-B with the low molecular weight polymer caused further improvement in mask linearity, EL, and iso-dense bias at hp 32 nm, although LWR was rather increased.
机译：研究了不同分子量的聚合物抗蚀剂材料的EUV光刻性能。使用Selete的SFET进行的EUV曝光实验清楚地表明，使用中低分子量的聚合物，线宽粗糙度（LWR）和1：1半间距（hp）分辨率均得到改善。相对于具有高分子量的聚合物，这些聚合物显示出高溶解反差。掩模的线性数据还显示，低分子量的聚合物对关键尺寸（CD）的线性依赖性低于hp 26 nm的掩模尺寸。抗蚀剂膜的热分析表明，随着分子量从高到低，热玻璃化转变温度（Tg）从190℃急剧降低到110℃。与直接反映聚合物迁移率的Tg相比，通过降低聚合物的分子量，在hp 32 nm处的曝光范围（EL）从12.3％增加到14.5％。类似地，通过利用低分子量聚合物也改善了等密度偏压。尽管LWR有所增加，但PAG-B与低分子量聚合物的结合可进一步改善掩模线性，EL和hp 32 nm处的等密度偏压。

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