• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Characterization of the Photoacid Diffusion Length
【24h】

Characterization of the Photoacid Diffusion Length

机译：光酸扩散长度的表征

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The photoacid diffusion length is a critical issue for extreme ultraviolet (EUV) lithography because it governs the critical dimension (CD), line-edge-roughness (LER), and line-width-roughness (LWR) of photoresist materials. Laboratory-based experimental methods that complement full lithographic testing would enable a rapid screening of materials and process conditions. This paper provides an approach to characterize the photoacid diffusion length by applying a bilayer stack technique. The method involves quantitative measurements of the deprotection kinetics as well as film thickness at each process step: radiation exposure, post-exposure bake, and development. Analogous to a contrast curve, by comparing the film thickness of the bilayer before and after development, the photoacid diffusion length was deduced in a commercial EUV photoresist and compared to EUV lithography. Further, by combining the experiments with kinetics modeling, the measured photoacid diffusion length was predicted. Lastly, based upon the measured kinetics parameters, a criterion was developed that next-generation resists must meet to achieve a 16 nm photoacid diffusion length. These guidelines are discussed in terms of correlations and contributions from the photoacid and resist properties. In particular, the trapping kinetics of the photoacid provides a route to reduce LER and the CD at low dose.
机译：光酸扩散长度是极紫外（EUV）光刻的关键问题，因为它决定着光刻胶材料的临界尺寸（CD），线边缘粗糙度（LER）和线宽粗糙度（LWR）。以实验室为基础的实验方法可以补充完整的光刻测试，从而可以快速筛选材料和工艺条件。本文提供了一种通过应用双层堆叠技术表征光酸扩散长度的方法。该方法涉及在每个工艺步骤中对脱保护动力学以及膜厚度的定量测量：辐射暴露，曝光后烘烤和显影。类似于对比度曲线，通过比较显影前后的双层膜厚度，可以推导出市售EUV光刻胶中的光酸扩散长度，并与EUV光刻进行比较。此外，通过将实验与动力学建模相结合，可以预测出测得的光酸扩散长度。最后，根据测得的动力学参数，制定了一个标准，即下一代抗蚀剂必须达到16 nm的光酸扩散长度。根据光酸和抗蚀剂特性的相关性和贡献来讨论这些准则。特别地，光酸的俘获动力学提供了降低低剂量下的LER和CD的途径。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号