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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Single Component Molecular Resists Containing Bound Photoacid Generator Functionality
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Single Component Molecular Resists Containing Bound Photoacid Generator Functionality

机译：单组分分子抗蚀剂，具有束缚的光致产酸剂功能

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摘要

A series of single component molecular resists were designed, synthesized, characterized, and patterned using 100 keV e-beam lithography. An onium salt PAG based single component system (referred to here as TAS) which creates a free photoacid upon exposure is shown to produce a low line edge roughness (LER) of 3.9 nm (3c), but was limited in resolution due to photoacid diffusion. A single component molecular resist with a covalently bound non-ionic photoacid generator (referred to here as NBB), i.e. one in which the photoacid anion is bound to the resist core, was found to exhibit an improved resolution of 40 nm due to reduced photoacid diffusion while maintaining a good LER and line width roughness (LWR) of 3.9 nm and 5.6 nm, respectively. Despite the small size of NBB, it was found to exhibit a glass transition temperature of 82℃. It also showed good adhesion, formed high quality films, and showed no dark erosion during development. These compounds demonstrate that it is possible to form single component molecular resists using both ionic and non-ionic photoacid generators and that such small molecule resists can provide all the basic requirements to serve as functional chemically amplified resists.
机译：使用100 keV电子束光刻技术设计，合成，表征和图案化了一系列单组分分子抗蚀剂。基于鎓盐PAG的单组分系统（在本文中称为TAS）在曝光时会产生游离的光酸，显示产生3.9 nm（3c）的低线边缘粗糙度（LER），但由于光酸扩散而导致分辨率受到限制。发现具有共价键合的非离子型光酸产生剂的单组分分子抗蚀剂（此处称为NBB），即其中光酸阴离子与抗蚀剂核键合的分子抗蚀剂，由于光酸减少而显示出40 nm的高分辨率扩散，同时分别保持3.9 nm和5.6 nm的良好LER和线宽粗糙度（LWR）。尽管NBB的尺寸很小，但发现其玻璃化转变温度为82℃。它还显示出良好的附着力，形成了高质量的薄膜，并且在显影过程中没有暗蚀。这些化合物证明可以使用离子型和非离子型光酸产生剂来形成单组分分子抗蚀剂，并且这种小分子抗蚀剂可以提供用作功能性化学放大抗蚀剂的所有基本要求。

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