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Negative-Tone Molecular Resists Based on Cationic Polymerization

机译:基于阳离子聚合的负音分子抗蚀剂

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摘要

There is increasing demand for higher performance resists with superior resolution, sensitivity, and line edge roughness for both electron beam and extreme ultraviolet lithography applications. A new class of negative tone chemically amplified molecular resists has been developed based on epoxide cross-linking that combines high sensitivity with low line edge roughness and excellent resolution. Three different resists from this class have been made that all show superior performance compared to SU-8 in high resolution dense patterns. The functionality and size of the resist molecules were systematically changed to investigate these effects on imaging performance under e-beam lithography. The di-functional epoxy resist, 2-Ep, had < 25 nm half-pitch resolution in dense 1:1 line-space patterns, sensitivity of 38 μC/cm~2, and low 3a LER of 2.9 nm for 30 nm half-pitch. The tri-functional epoxy resist, 3-Ep, showed 30 nm resolution in dense features, 3a LER of 2.3 nm, and a sensitivity of 20 μC/cm~2. The tetra-functional epoxy resist, 4-Ep, likewise showed good resolution of 35 nm half-pitch in dense features, sensitivity of 22 μC/cm~2, and a low 3a LER of 2.3 nm. This class of negative tone resist compounds are able to obtain an excellent combination of resolution, LER, and sensitivity, and show promise as high performance resists for next generation lithography.
机译:对于电子束和极紫外光刻应用,越来越需要具有更高的分辨率,灵敏度和线边缘粗糙度的高性能抗蚀剂。基于环氧化物交联的新型负性化学放大分子抗蚀剂已被开发出来,其结合了高灵敏度,低线边缘粗糙度和出色的分辨率。制作了三种不同类型的抗蚀剂,与SU-8相比,它们在高分辨率密集图案中均表现出优异的性能。系统地更改了抗蚀剂分子的功能和大小,以研究这些对电子束光刻成像性能的影响。双功能环氧树脂抗蚀剂2-Ep在密集的1:1线间距图案中具有<25 nm的半间距分辨率,灵敏度为38μC/ cm〜2,并且对于30 nm的半间距的2.9 nm的低3a LER沥青。三官能环氧抗蚀剂3-Ep在致密特征中显示30 nm分辨率,2.3 nm的3a LER和20μC/ cm〜2的灵敏度。四官能环氧抗蚀剂4-Ep同样在密集特征中显示了35 nm半间距的良好分辨率,22μC/ cm〜2的灵敏度和2.3 nm的低3a LER。这类负性抗蚀剂化合物能够获得分辨率,LER和灵敏度的出色组合,并有望作为下一代光刻的高性能抗蚀剂。

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