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首页> 外文会议>Conference on Design for Manufacturability through Design-Process Integration; 20080128-29; San Jose,CA(US) >Site Portability and Extrapolative Accuracy of a Predictive Resist Model
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Site Portability and Extrapolative Accuracy of a Predictive Resist Model

机译：预测抵抗模型的站点可移植性和外推精度

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As design rules shrink, the goal for model-based OPC/RET schemes is to minimize the discrepancy between the intended pattern and the printed pattern, particularly among 2d structures. Errors in the OPC design often result from insufficient model calibration across the parameter space of the imaging system and the focus-exposure process window. Full-chip simulations can enable early detection of hotspots caused by OPC/RET errors, but often these OPC model simulations have calibration limitations that result in undetected critical hotspots which limit the process window and yield. Also, as manufacturing processes are improved to drive yield enhancement, and are transferred to new facilities, the lithography tools and processes may differ from the original process used for OPC/RET model calibration conditions, potentially creating new types of hotspots in the patterned layer. In this work, we examine the predictive performance of rigorous physics-based 193 nm resist models in terms of portability and extrapolative accuracy. To test portability, the performance of a physical model calibrated using Id data from a development facility will be quantified using Id and 2d hotspot data generated at a different manufacturing facility with a production attenuated-PSM lithography process at k_1 < 0.4. To test extrapolative accuracy, a similar test will be conducted using data generated at the manufacturing facility with illumination conditions which differ significantly from the original calibration conditions. Simulations of post-OPC process windows will be used to demonstrate application of calibrated physics-based resist models in hotspot characterization and mitigation.
机译：随着设计规则的缩小，基于模型的OPC / RET方案的目标是最大程度地减少预期图案和印刷图案之间的差异，尤其是在2d结构之间。 OPC设计中的错误通常是由于成像系统的参数空间和焦点曝光过程窗口中的模型校准不足而导致的。全芯片仿真可以实现由OPC / RET错误引起的热点的早期检测，但是这些OPC模型仿真通常具有校准限制，导致无法检测到的关键热点，从而限制了工艺窗口和成品率。另外，随着制造工艺的改进以提高产量并转移到新的设备上，光刻工具和工艺可能与用于OPC / RET模型校准条件的原始工艺不同，从而有可能在图案化层中产生新型的热点。在这项工作中，我们从便携性和外推精度的角度研究了基于物理学的严格193 nm抗蚀剂模型的预测性能。为了测试可移植性，将使用在不同制造厂使用k_1 <0.4的生产衰减PSM光刻工艺产生的Id和2d热点数据来量化使用来自开发设施的Id数据校准的物理模型的性能。为了测试外推精度，将使用制造工厂在光照条件与原始校准条件明显不同的情况下生成的数据进行类似的测试。 OPC后工艺窗口的仿真将用于演示基于物理特性的校准抗蚀剂模型在热点表征和缓解中的应用。

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